GBU404-K GBU407-K Taiwan Semiconductor 4A, 400V - 1000V Standard Bridge Rectifier FEATURES KEY PARAMETERS Ideal for printed circuit board PARAMETER VALUE UNIT High case dielectric strength of 1500V RMS I 4 A F High surge current capability V 400 - 1000 V RRM UL Recognized File E-326243 RoHS Compliant I 150 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package GBU APPLICATIONS Configuration Quad Switching mode power supply (SMPS) Adapters Lighting application MECHANICAL DATA Case: GBU Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Polarity: As marked Weight: 4.00g (approximately) GBU ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL GBU404-K GBU405-K GBU406-K GBU407-K UNIT Marking code on the device GBU404 GBU405 GBU406 GBU407 Repetitive peak reverse voltage V 400 600 800 1000 V RRM Reverse voltage, total rms value V 280 420 560 700 V R(RMS) Forward current I 4 A F Surge peak forward current, 8.3ms single half sine-wave superimposed I 150 A FSM on rated load per diode 2 2 Rating for fusing (t<8.3ms) I t 93 A s Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version: E2103 GBU404-K GBU407-K Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 20 C/W JA Junction-to-case thermal resistance R 4 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 2A, T = 25C - 1.0 V F J (1) Forward voltage per diode V F I = 4A, T = 25C - 1.1 V F J T = 25C - 5 A J (2) Reverse current rated V per diode I R R T = 125C - 500 A J GBU404-K 100 - pF GBU405-K Junction capacitance per diode 1MHz, V = 4.0V C R J GBU406-K 45 - pF GBU407-K Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING GBU4x-K GBU 20 / Tube Notes: 1. x defines voltage from 400V(GBU404-K) to 1000V(GBU407-K) 2 Version: E2103