Product Information

LLDB3

LLDB3 electronic component of Taiwan Semiconductor

Datasheet
Taiwan Semiconductor Diacs 150mW Bi-directional Trigger Diode

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

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LLDB3
Taiwan Semiconductor

1 : USD 0.6343
25 : USD 0.3004
100 : USD 0.1457
250 : USD 0.1315
500 : USD 0.1139
1000 : USD 0.0859
2500 : USD 0.0735
5000 : USD 0.0663
10000 : USD 0.057
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Breakover Voltage VBO
Breakover Current IBO Max
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Maximum Operating Temperature
Mxhts
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Subcategory
Taric
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LLDB3/ LLDB3TG Taiwan Semiconductor Small Signal Product 150mW Bi-directional Trigger Diode FEATURES - Surface mounted device - Hermetically sealed glass - Matte Tin(Sn) terminal finish - All external surfaces are corrosion resistant and terminals are readily solderable MECHANICAL DATA - Case: Mini-MELF package - High temperature soldering guaranteed: 260C/10s Mini-MELF (LL34) - Weight: 29 2.5 mg Hermetically Sealed Glass - Terminal: Pure tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed - Pb free and RoHS compliant MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Repetitive Peak Forward Current Pulse Width = 20s I 2 A FRM Power Dissipation P 150 mW D o Thermal Resistance (Junction to Ambient) (Note) R 400 C/W JA o Junction and Storage Temperature Range T , T - 40 to + 125 C J STG Notes: Valid provided that electrodes are kept at ambient temperature PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT LLDB3 28 32 36 V Break-Over Voltage C=22nF V BO LLDB3TG 30 32 34 LLDB3 3 Break-Over Voltage Symmetry + / -V C=22nF V BO LLDB3TG 2 LLDB3 5 Dynamic Breakdown Voltage V I to I =10mA V BO F LLDB3TG 9 Output Voltage V (Note) 5 V O Leakage Current I V = 0.5V (Max) 10 A B B BO LLDB3 100 I Break-Over Current C=22nF A BO LLDB3TG - 15 Notes: Test Circuit Version: D14 Document Number: DS S1407002 Not RecommendedLLDB3/ LLDB3TG Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25 unless otherwise noted) A Fig. 1 Admissible Power Dissipation Curve 1 60 1 20 8 0 4 0 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 00 1 10 1 20 1 30 o Ambient Tempeatature ( C) Fig. 3 Repetitive Peak Pulse Current VS. Fig. 2 Relative Variation of VBO VS. Junction Pulse Duration (Maximum Values) Temperature (Typical Values) 1 .0 8 1 00 1 .0 7 1 .0 6 1 0 1 .0 5 1 .0 4 1 .0 3 1 1 .0 2 1 .0 1 1 0 .1 2 5 5 0 7 5 1 00 1 25 1 1 0 1 00 tp (s) Tj (C) V : Break-Over Voltage BO I : Break-Over Current BO V : Dynamic Breakover Voltage I : Leakage Current at V =0.5*V B B BO V : Voltage at Current I =10mA F F Version: D14 Document Number: DS S1407002 Not Recommended V Tj / V Tj=25 C BO BO Power Dissipation (mW) Repetitive Peak Pulse Current (A)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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