Product Information

SRAF530 C0

SRAF530 C0 electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 5A30VSgl SCHOTTKY RectIso

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.6783 ea
Line Total: USD 3.68

864 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
767 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

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SRAF530 C0
Taiwan Semiconductor

1 : USD 2.1965
10 : USD 1.8745
100 : USD 1.5295
500 : USD 1.3225
1000 : USD 1.1443
2500 : USD 1.1327
5000 : USD 1.1247
10000 : USD 1.0879
25000 : USD 1.0614

     
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SRAF520 SRAF5150 Taiwan Semiconductor 5A, 20V - 150V Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Low power loss, high efficiency I 5 A F Guard ring for over-voltage protection V 20 - 150 V RRM High surge current capability UL Recognized File E-326243 I 120 A FSM RoHS Compliant T 125, 150 C J MAX Halogen-free according to IEC 61249-2-21 Package ITO-220AC Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters DC to DC converter MECHANICAL DATA Case: ITO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 2 whisker test Polarity: As marked ITO-220AC Weight: 1.70g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A SRAF SRAF SRAF SRAF SRAF SRAF SRAF SRAF PARAMETER SYMBOL UNIT 520 530 540 550 560 590 5100 5150 Marking code on SRAF SRAF SRAF SRAF SRAF SRAF SRAF SRAF the device 520 530 540 550 560 590 5100 5150 Repetitive peak V 20 30 40 50 60 90 100 150 V RRM reverse voltage Reverse voltage V 14 21 28 35 42 63 70 105 V R(RMS) total rms value Forward current I 5 A F Surge peak forward current, 8.3ms single half sine wave I 120 A FSM superimposed on rated load Critical rate of rise dv/dt 10,000 V/s of off-state voltage Junction T -55 to +125 -55 to +150 C J temperature Storage T -55 to +150 C STG temperature 1 Version: K2105 SRAF520 SRAF5150 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case resistance R 10 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT SRAF520 SRAF530 - 0.55 V SRAF540 SRAF550 (1) - 0.70 V Forward voltage I = 5A, T = 25C V F J F SRAF560 SRAF590 - 0.85 V SRAF5100 SRAF5150 - 0.95 V SRAF520 SRAF530 SRAF540 - 500 A SRAF550 T = 25C J SRAF560 SRAF590 SRAF5100 - 200 A SRAF5150 SRAF520 SRAF530 - 15 mA SRAF540 (2) SRAF550 Reverse current rated V T = 100C I - 10 mA R J R SRAF560 SRAF590 SRAF5100 - - mA SRAF5150 SRAF520 SRAF530 SRAF540 - - mA SRAF550 T = 125C J SRAF560 SRAF590 SRAF5100 - 5 mA SRAF5150 Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1)(2) ORDERING CODE PACKAGE PACKING SRAF5x ITO-220AC 50 / Tube ITO-220AC SRAF5xH 50 / Tube Notes: 1. x defines voltage from 20V(SRAF520) to 150V(SRAF5150) 2. H means AEC-Q101 qualified 2 Version: K2105

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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