Product Information

TSSA5U50HE3G

TSSA5U50HE3G electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 5A 50V Trn Schtky Rectifiers AECQ100

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6854 ea
Line Total: USD 1.6854

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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TSSA5U50HE3G
Taiwan Semiconductor

1 : USD 1.6854
10 : USD 0.8202
100 : USD 0.4629
500 : USD 0.377
1000 : USD 0.3107

     
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TSSA5U50 - TSSA5U60 Taiwan Semiconductor 5A, 50V - 60V Trench Schottky Rectifiers FEATURES - Patented Trench Schottky technology - Low power loss/ high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 DO-214AC (SMA) TYPICAL APPLICATIONS Trench Schottky barrier rectifier is designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compund (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A PARAMETER SYMBOL TSSA5U50 TSSA5U60 UNIT Marking code 5U50 5U60 V Maximum repetitive peak reverse voltage 50 60 V RRM Maximum average forward rectified current I 5 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 7575 AA FSM superimposed on rated load TYTYPP.. MAX. TYP. MAX. T = 25C 0.44 0.54 0.48 0.48 0.56 Instantaneous forward voltage J I = 5A V V F F (Note 1) T = 125C 0.39 0.49 0.44 0.52 J T = 25C 300 A Maximum instantaneous reverse current at rated J I R reverse voltage T = 125C 50 mA J R 25 28 JL Typical thermal resistance C/W R 70 JA Operating temperature range T - 55 to +150 C J Storage temperature range T - 55 to +150 C STG Note 1: Pulse test with pulse width = 300s, 1% duty cycle Version: D1512TSSA5U50 - TSSA5U60 Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING PACKING CODE PART NO. PACKAGE PACKING SUFFIX CODE SUFFIX E3 Clip SMA 1,800 / 7 Plastic reel TSSA5UXX H G (Note 1, 2) E2 Clip SMA 7,500 / 13 Plastic reel Note 1:X defines voltage from 50V (TSSA5U50) to 60V (TSSA5U60) Note 2: Whole series with green compound EXAMPLE EXAMPLE PART NO. PACKING CODE PART NO. PACKING CODE DESCRIPTION PART NO. SUFFIX SUFFIX AEC-Q101 qualified TSSA5U60HE3G TSSA5U60 H E3 G Green compound RATINGS AND CHARACTERISTICS CURVES (T = 25C unless otherwise noted) A FIG. 1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 6 TSSA5U50 TSSA5U50 5 10 4 TSSA5U60 T =150C J 3 T =125C J 2 1 WITH HEATSINK 5mm x 5mm T =100C J Cu-pad 1 T =25C J 0. 1 0 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 0 25 50 75 100 125 150 o FORWARD VOLTAGE (V) LEAD TEMPERATURE ( C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 10 100 TSSA5U50 TSSA5U60 T =150C J 1 T =125C J 10 28 T =100C J T =150C J 0. 1 T =125C J 1 T =100C J 0. 01 T =25C J T =25C J 0. 001 0. 1 10 20 30 40 50 60 70 80 90 100 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: D1512 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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