X-On Electronics has gained recognition as a prominent supplier of SS24LHR3G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SS24LHR3G Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

SS24LHR3G Taiwan Semiconductor

SS24LHR3G electronic component of Taiwan Semiconductor
SS24LHR3G Taiwan Semiconductor
SS24LHR3G Schottky Diodes & Rectifiers
SS24LHR3G  Semiconductors

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See Product Specifications
Part No. SS24LHR3G
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 2A 40V Schottky Rectifier
Datasheet: SS24LHR3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.845 ea
Line Total: USD 0.84 
Availability - 6821
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6821
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 0.845
10 : USD 0.74
100 : USD 0.462
500 : USD 0.3971
1000 : USD 0.3476
1800 : USD 0.3146
3600 : USD 0.3058
9000 : USD 0.2937

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SS24LHR3G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SS24LHR3G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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SS22L - SS215L Taiwan Semiconductor CREAT BY ART 2A, 20V - 150V Surface Mount Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Sub SMA Case: Sub SMA Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.019 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A SS SS SS SS SS SS SS SS PARAMETER SYMBOL UNIT 22L 23L 24L 25L 26L 29L 210L 215L Marking code 22L 23L 24L 25L 26L 29L 20L 2AL Maximum repetitive peak reverse voltage V 20 30 40 50 60 90 100 150 V RRM Maximum RMS voltage V 14 21 28 35 42 63 70 105 V RMS Maximum DC blocking voltage V 20 30 40 50 60 90 100 150 V DC I Maximum average forward rectified current 2 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 0.50 0.70 0.85 0.95 V F 2A T =25C 0.4 0.1 J Maximum reverse current rated V T =100C I 15 10 - mA R J R T =125C -- 5 J Voltage rate of change (Rated V ) 10000 dV/dt V/s R R JL 17 Typical thermal resistance C/W R 75 JA Operating junction temperature range T - 55 to +125 - 55 to +150 C J Storage temperature range T - 55 to +150 C STG Note 1: Pulse test with PW=300s, 1% duty cycle Document Number: DS D1409054 Version: N15SS22L - SS215L Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING PACKING CODE PACKAGE PACKING SUFFIX CODE SUFFIX RU Sub SMA 1,800 / 7 Plastic reel (8mm tape) RV Sub SMA 3,000 / 7 Plastic reel (8mm tape) RT Sub SMA 7,500 / 13 Paper reel (8mm tape) MT Sub SMA 7,500 / 13 Plastic reel (8mm tape) RQ Sub SMA 10,000 / 13 Paper reel (8mm tape) MQ Sub SMA 10,000 / 13 Plastic reel (8mm tape) SS2XL H G (Note 1) R3 Sub SMA 1,800 / 7 Plastic reel (12mm tape) RF Sub SMA 3,000 / 7 Plastic reel (12mm tape) R2 Sub SMA 7,500 / 13 Paper reel (12mm tape) M2 Sub SMA 7,500 / 13 Plastic reel (12mm tape) RH Sub SMA 10,000 / 13 Paper reel (12mm tape) MH Sub SMA 10,000 / 13 Plastic reel (12mm tape) Note 1: defines voltage from 20V (SS22L) to 150V (SS215L) EXAMPLE PREFERRED PART NO. PACKING CODE PART NO. PACKING CODE DESCRIPTION PART NO. SUFFIX SUFFIX AEC-Q101 qualified SS26LHRUG SS26L H RU G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 2 MAXIMUM NON-REPETITIVE FORWARD FIG.1 FORWARD CURRENT DERATING CURVE SURGE CURRENT 2.5 50 2 8.3ms Single Half Sine-Wave 40 SS25L-SS215L 1.5 SS22L-SS24L 30 1 20 0.5 RESISTIVE OR 10 INDUCTIVE LOAD 0 0 50 60 70 80 90 10 0 11 0 12 0 13 0 14 0 15 0 16 0 17 0 1 10 100 LEAD TEMPERATURE (C) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 10 0 SS22L-SS24L SS25L-SS215L o T =125 C J 10 SS25L-SS26L 10 1 SS215L 0. 1 SS22L-SS24L o T =75 C J 1 0. 01 o T =25 C J SS29L-SS210L 0. 001 0 20 40 60 80 100 120 140 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 PERCENT OF RATED PEAK REVERSE VOLYAGE(%) FORWARD VOLTAGE (V) Document Number: DS D1409054 Version: N15 INSTANTANEOUS FORWARD A AVERAGE FORWARD CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE A PEAK FORWARD SURGE CURRENT CURRENT (mA) (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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