TS4148 RX Taiwan Semiconductor

TS4148 RXG 400mW High Speed SMD Switching Diode Small Signal Diode 1206 A B Features Designed for mounting on small surface. Extremely thin/leadless package C High mounting capability,strong surage with stand, high reliability. D Pb free version and RoHS compliant Halogen free E Unit (mm) Unit (inch) Mechanical Data Dimensions Case :1206 standard package, molded plastic Min Max Min Max A 3.00 3.40 0.118 0.134 Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed B 1.30 1.70 0.051 0.067 High temperature soldering guaranteed: 260C/10s C 0.35 0.75 0.014 0.030 Polarity : Indicated by cathode band D 0.75 0.95 0.030 0.037 Weight : 0.010 gram (approximately) E 1.68 1.50 0.076 0.044 Ordering Information Part No. Packing Package TS4148 RXG 5Kpcs / 7 Reel 1206 Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Power Dissipation PD 400 mW Non-Repetitive Peak Reverse Voltage VRSM 100 V Repetitive Peak Reverse Voltage VRRM 75 V Repetitive Peak Forward Current IFRM 300 mA Mean Forward Current IO 150 mA Non-Repetitive Peak Forward Surge Current Tp=1sec square waveform IFSM 0.5 A 8.3ms single half sine waveform 2.0 Thermal Resistance (Junction to Ambient) (Note 1) R JA 375 C/W Junction and Storage Temperature Range TJ, TSTG -65 to + 175 C Electrical Characteristics Type Number Symbol Min Max Units Reverse Breakdown Voltage (Note 2) V(BR) - 75 V VF - 1.00 V Forward Voltage IF= 10mA VR= 20V - 25 nA Reverse Leakage Current IR VR= 75V - 5 A Junction Capacitance VR=0, f=1.0MHz CJ 4.0 pF Reverse Recovery Time (Note3) Trr 4 ns Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IR=100 A Notes:3. Test Condition : IF=10mA, I =1mA,RL=100 R Version : G11TS4148 RXG 400mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics FIG 2 Reverse Current vs Reverse Voltage 1000 100 100 10 Ta=25C Ta=25C 10 1 Ta=100 1 0.1 0.1 0.01 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 Instantaneous Forward Voltage (V) Reverse Voltage (V) FIG 3 Admissible Power Dissipation Curve FIG 4 Typical Junction Capacitance 500 1.2 1.1 400 1 300 0.9 200 0.8 100 0.7 0 0.6 0 25 50 75 100 125 150 175 200 02468 10 Reverse Voltage (V) Ambient Temperature (C) FIG 5 Forward Resistance vs. Forward Current 10000 1000 100 10 1 0 0 1 10 100 Forward Current (mA) Version : G11 Dynamic Forward Resistance ( ) Power Dissipation (mW) Instantaneous Forward Current (A) Junction Capacitance (pF) Reverse Current (uA)