Product Information

TSD20H120CW

Name: TSD20H120CW
Brand: Taiwan Semiconductor
SKU: TSD20H120CW_TaiwanSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

TSD20H120CW electronic component of Taiwan Semiconductor

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Datasheet

Schottky Diodes & Rectifiers Diode, Low VF Trench Schottky, 20A, 120V

Manufacturer: Taiwan Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1600: USD 1.3987 ea
Line Total: USD 2237.92

0 - Global Stock

MOQ: 1600 Multiples: 1600
Pack Size: 1600

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 27 May to Wed. 29 May MOQ : 1600 Multiples : 1600 TSD20H120CW Taiwan Semiconductor	1600 : USD 0.6383 2400 : USD 0.6107 4800 : USD 0.6107 9600 : USD 0.6003 24800 : USD 0.5911

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Additional Infomation About Product

TSD20H100CW TSD20H200CW Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifier FEATURES KEY PARAMETERS Patented Trench Schottky technology PARAMETER VALUE UNIT Excellent high temperature stability I 2 x 10 A F Low forward voltage V 100 - 200 V RRM Low power loss/ high efficiency High forward surge capability I 100 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 2 Package TO-263AB (D PAK) Configuration Dual dies APPLICATIONS Lighting application Switching mode power supply (SMPS) Adapters On-board DC/DC converter MECHANICAL DATA 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked 2 TO-263AB (D PAK) Weight: 1.60g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A TSD20H TSD20H TSD20H TSD20H PARAMETER SYMBOL UNIT 100CW 120CW 150CW 200CW TSD20H TSD20H TSD20H TSD20H Marking code on the device 100CW 120CW 150CW 200CW Repetitive peak reverse voltage V 100 120 150 200 V RRM Reverse voltage, total rms value V 70 84 105 140 V R(RMS) per device 20 A Forward current I F per diode 10 A Peak forward surge current, 8.3ms single I 100 A FSM half sine-wave superimposed on rated load dV/dt 10,000 V/s Critical rate of rise of off-state voltage Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version: F2009 TSD20H100CW TSD20H200CW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 3.8 C/W JL Junction-to-case thermal resistance R 2.8 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 5A, T = 25C 0.57 - V F J I =10A, T = 25C 0.67 0.79 V F J TSD20H100CW I = 5A, T = 125C 0.50 - V F J I = 10A, T = 125C 0.59 0.68 V F J I = 5A, T = 25C 0.62 - F J V I =10A, T = 25C 0.78 0.87 V F J TSD20H120CW I = 5A, T = 125C 0.53 - V F J I = 10A, T = 125C 0.63 0.72 V Forward voltage per F J V F (1) diode 0.72 - I = 5A, T = 25C V F J I =10A, T = 25C 0.81 0.90 V F J TSD20H150CW I = 5A, T = 125C 0.58 - F J V I = 10A, T = 125C 0.66 0.75 V F J I = 5A, T = 25C 0.77 - V F J I =10A, T = 25C 0.83 0.93 V F J TSD20H200CW 0.62 - I = 5A, T = 125C V F J I = 10A, T = 125C 0.68 0.78 V F J T = 25C - 200 J A TSD20H100CW T = 125C TSD20H120CW 8 25 J mA Reverse current I R (2) rated V per diode T = 25C - 100 J A R TSD20H150CW T = 125C TSD20H200CW 3 15 J mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: F2009

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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