TSM320N03CX 30V N-Channel Power MOSFET SOT-23 Pin Definition: Key Parameter Performance 1. Gate Parameter Value Unit 2. Source 3. Drain V 30 V DS V = 4.5V 32 GS R (max) m DS(on) V = 2.5V GS 40 Q 8.4 nC g Block Diagram Features Improved dv/dt capability Fast switching Ordering Information Part No. Package Packing TSM320N03CX RFG SOT-23 3kpcs / 7 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (T = 25C unless otherwise noted) C Limit Parameter Symbol Unit Drain-Source Voltage V V DS 30 Gate-Source Voltage V V GS 12 Tc = 25C A 5.3 Continuous Drain Current I D Tc = 100C A 3.4 (Note 1) Pulsed Drain Current I A DM 21.2 Power Dissipation T = 25C P 1.56 W C D Operating Junction Temperature T 150 C J -55 to +150 Storage Temperature Range T C STG Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Ambient R 80 C/W JA 1/5 Version: A15 TSM320N03CX 30V N-Channel Power MOSFET Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV V GS D DSS 30 -- -- V = 4.5V, I = 4A -- 27 32 GS D Drain-Source On-State Resistance R m DS(ON) V = 2.5V, I = 3A -- 32 40 GS D Gate Threshold Voltage V = V , I = 250A V 0.4 0.6 0.9 V DS GS D GS(TH) V = 30V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 24V, T = 125C -- -- 10 DS J Gate Body Leakage V = 12V, V = 0V I -- -- 100 nA GS DS GSS (Note 2) Forward Transconductance V = 10V, I = 3A g -- 7 -- S DS D fs Dynamic (Note 2,3) Total Gate Charge Q -- 8.4 -- g V = 10V, I = 4A, (Note 2,3) DS D -- 1 -- Gate-Source Charge Q gs nC V = 4.5V GS (Note 2,3) Gate-Drain Charge Q -- 2.2 -- gd Input Capacitance C -- 695 -- iss V = 10V, V = 0V, DS GS Output Capacitance C -- 45 -- oss pF f = 1.0MHz -- 36 -- Reverse Transfer Capacitance C rss Switching (Note 2,3) Turn-On Delay Time t -- 4.5 -- d(on) (Note 2,3) Turn-On Rise Time t -- 13 -- r V = 10V, I = 1A, DD D ns (Note 2,3) V = 4.5V, R =25 -- 27 -- Turn-Off Delay Time t GS GEN d(off) (Note 2,3) Turn-Off Fall Time t -- 8.3 -- f Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source -- -- 5.3 I A S Diode Forward Current Integral reverse diode in the MOSFET Maximum Pulse Drain-Source Diode -- -- 21.2 I A SM Forward Current Diode-Source Forward Voltage V = 0V, I = 1A V -- -- 1 V GS S SD Note: 1. Pulse width limited by safe operating area 2. Pulse test: pulse width d 300s, duty cycle d 2% 3. Switching time is essentially independent of operating temperature. 2/5 Version: A15