TSM3400 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: V (V) R (m) I (A) 1. Gate DS DS(on) D 2. Source 28 V = 10V 5.8 GS 3. Drain 30 33 V = 4.5V 5.0 GS 52 V = 2.5V 4.0 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM3400CX RF SOT-23 3Kpcs / 7 Reel N-Channel MOSFET o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 5.8 A D Pulsed Drain Current I 30 A DM a,b Continuous Source Current (Diode Conduction) I 2.5 A S o Maximum Power Dissipation Ta = 25 C P 1.4 W D o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit o C/W Junction to Foot Thermal Resistance R 70 JF o Junction to Ambient Thermal Resistance (PCB mounted) R 90 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. 1/1 Version: A09 TSM3400 30V N-Channel MOSFET o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 0.7 -- 1.4 V DS GS D GS(TH) Gate Body Leakage V = 12V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 24V, V = 0V I -- -- 1.0 A DS GS DSS On-State Drain Current V = 5V, V = 4.5V I 20 -- -- A DS GS D(ON) V = 10V, I = 5.8A -- 23 28 GS D Drain-Source On-State Resistance V = 4.5V, I = 5A R -- 28 33 m DS(ON) GS D V = 2.5V, I = 4A -- 43 52 GS D Forward Transconductance V = 5V, I = 5A g 10 15 -- S DS D fs Diode Forward Voltage I = 1.0A, V = 0V V -- 0.76 1.0 V S GS SD b Dynamic Total Gate Charge Q -- 9.7 12 g V = 15V, I = 5.8A, DS D nC Gate-Source Charge Q -- 1.63 -- gs V = 10V GS Gate-Drain Charge Q -- 3.1 -- gd Input Capacitance C -- 857 1030 iss V = 15V, V = 0V, DS GS pF Output Capacitance C -- 97 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 71 -- rss c Switching Turn-On Delay Time t -- 3.3 5 d(on) V = 15V, R = 1.8, DD L Turn-On Rise Time t -- 4.7 7 r I = 1A, V = 10V, nS D GEN Turn-Off Delay Time t -- 26 39 d(off) R = 6 G Turn-Off Fall Time t -- 4.1 6.2 f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/2 Version: A09