DMN62D0UDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET I max Low On-Resistance D BV R max DSS DS(ON) T = +25C Low Gate Threshold Voltage A 2 V = 4.5V Low Input Capacitance GS 60V 350mA 2.5 V = 2.5V Fast Switching Speed GS Low Input/Output Leakage Ultra-Small Surface Mount Package Description ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ) and yet maintain superior switching performance, making it DS(ON) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT363 Case Material: Molded Plastic. Green Molding Compound. Motor Control UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT363 D2 D1 D G S 2 1 1 G2 G1 ESD Protected Gate Gate Protection Gate Protection S2 S1 Diode S G D Diode 2 2 1 Top View Q2 N-Channel Q1 N-Channel Top View Equivalent Circuit Pin out Ordering Information (Note 4) Part Number Case Packaging DMN62D0UDW-7 SOT363 3000/Tape & Reel DMN62D0UDW-13 SOT363 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN62D0UDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 350 A mA Continuous Drain Current (Note 6) V = 4.5V I GS D State 290 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 0.4 A I S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 320 mW P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 400 C/W R JA Total Power Dissipation (Note 6) 410 mW P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 312 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.0 V V = 10V, I = 250A GS(TH) DS D V = 4.5V, I = 0.1A GS D 1.2 2.0 Static Drain-Source On-Resistance R 1.4 2.5 V = 2.5V, I = 0.05A DS(ON) GS D 1.8 3.0 V = 1.8V, I = 0.05A GS D 1.8 Forward Transconductance S Yfs VDS =10V, ID = 0.2A Diode Forward Voltage 0.8 1.3 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 32 pF C iss V = 30V, V = 0V DS GS Output Capacitance 3.9 pF C oss f = 1.0MHz Reverse Transfer Capacitance 2.4 pF C rss Gate Resistance 101 R f = 1MHz , V = 0V, V = 0V g GS DS Total Gate Charge Q 0.5 nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.09 nC gs I = 250mA D Gate-Drain Charge Q 0.09 nC gd Turn-On Delay Time t 2.4 ns D(ON) Turn-On Rise Time 2.5 ns tR V = 30V, V = 10V, DD GS Turn-Off Delay Time 22.6 ns R = 25, I = 200mA t G D D(OFF) Turn-Off Fall Time 12.5 ns t F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN62D0UDW August 2016 Diodes Incorporated www.diodes.com Document number: DS38029 Rev. 2 - 2 NEW PRODUCT