Product Information

TSSE3U45 RVG

TSSE3U45 RVG electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 3A 45V Trench Schottky

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1435 ea
Line Total: USD 1.14

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

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TSSE3U45 RVG
Taiwan Semiconductor

1 : USD 1.1435
10 : USD 1.0115
100 : USD 0.6188
500 : USD 0.5031
1000 : USD 0.3987
3000 : USD 0.3638
6000 : USD 0.3362
9000 : USD 0.325

     
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TSSE3U45 - TSSE3U60 Taiwan Semiconductor CREAT BY ART Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ high efficiency - High forward surge capability - Halogen-free according to IEC 61249-2-21 definition - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - AEC-Q101 qualified SOD123HE TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: SOD123HE Molding compound, UL flammability classification rating 94V-0 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.022 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL TSSE3U45 TSSE3U60 UNIT Marking code E3U45 E3U60 Maximum repetitive peak reverse voltage V RRM Working Peak Reverse Voltage V 45 60 V RWM DC Blocking Voltage V RM V Maximum RMS voltage 32 42 V RMS Maximum average forward rectified current I 3 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load Typ Max Typ Max I = 1A 0.33 - 0.39 - F T = 25C J I = 3A 0.40 0.47 0.49 0.58 F V Instantaneous forward voltage (Note 1) V F I = 1A 0.24 - 0.28 - F T = 125C J I = 3A 0.34 0.44 0.43 0.52 F T = 25C 1000 A Maximum Instantaneous reverse current at rated J I R reverse voltage T = 125C 50 mA J Typical thermal resistance R 23 C/W JL Operating junction temperature range T - 55 to +150 C J T Storage temperature range - 55 to +150 C STG Note 1: Pulse Test with Pulse Width=300s, 1% Duty Cycle Document Number: DS D1411049 Version: E15TSSE3U45 - TSSE3U60 Taiwan Semiconductor ORDER INFORMATION (EXAMPLE) TSSE3U45 RVG Greencompoundcode Packingcode Partno. RATINGS AND CHARACTERISTICS CURVES o (T =25 C unless otherwise noted) A FIG.1 FORWARD CURRENT DERATING CURVE FIG.2 TYPICAL FORWARD CHARACTERISTICS 4 TSSE3U45 10 3 1 2 o T =125 C 0.1 J 1 o T =100 C J o WITH HEATSINK T =25 C J 5mm x 5mm PAD PCB 0.0 1 0 0 0.2 0.4 0.6 0.8 1 1.2 50 60 70 80 90 10 0 11 0 12 0 13 0 14 0 15 0 o FORWARD VOLTAGE (V) LEAD TEMPERATURE ( C) FIG.4 TYPICAL REVERSE CHARACTERISTICS FIG.3 TYPICAL FORWARD CHARACTERISTICS 100 TSSE3U60 TSSE3U45 10 10 o T =125 C J 1 o T =100 C J 1 0.1 o T =125 C J 0. 1 o T =100 C J o T =25 C J o T =25 C J 0.0 1 0. 01 0 0.2 0.4 0.6 0.8 1 1.2 10 20 30 40 50 60 70 80 90 100 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1411049 Version: E15 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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