Product Information

1SS362TE85LF

1SS362TE85LF electronic component of Toshiba

Datasheet
Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0654 ea
Line Total: USD 196.2

2910 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 382
Multiples : 1

Stock Image

1SS362TE85LF
Toshiba

382 : USD 0.2415
500 : USD 0.2351
1000 : USD 0.2304

2910 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

Stock Image

1SS362TE85LF
Toshiba

3000 : USD 0.0654

155415 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 426
Multiples : 1

Stock Image

1SS362TE85LF
Toshiba

426 : USD 0.09
500 : USD 0.0841
1000 : USD 0.074
2000 : USD 0.0707
3000 : USD 0.0667
6000 : USD 0.0661

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Brand
Cnhts
Hts Code
Maximum Diode Capacitance
Operating Temperature Range
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Unit: mm Ultra High Speed Switching Application Small package Low forward voltage : V = 0.97 V (typ.) F(3) Fast reverse recovery time : t = 1.6 ns (typ.) rr Small total capacitance : C = 0.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I mA FM 240 * Average forward current I mA O 80 * Surge current (10ms) I A FSM 1 * PD (Note 1, 3) 120 Power dissipation mW P (Note 2) 100 D T (Note 1) 150 j Junction temperature C T (Note 2) 125 j SSM T (Note 1) 55 to 150 stg JEDEC Storage temperature C T (Note 2) 55 to 125 stg JEITA TOSHIBA 1-2S1C Note: Using continuously under heavy loads (e.g. the application of high Weight: 2.4 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.36 mm 3) *: Unit rating. Total rating = Unit rating 1.5. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.63 F (1) F Forward voltage V I = 10 mA 0.75 F (2) F V V I = 100 mA 0.97 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.5 3.0 pF T R Reverse recovery time t I = 10 mA, Fig.1 1.6 4.0 ns rr F Start of commercial production 1990-10 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS362 Marking Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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