1SS362TE85LF Toshiba

1SS362TE85LF electronic component of Toshiba
1SS362TE85LF Toshiba
1SS362TE85LF Diodes - General Purpose, Power, Switching
1SS362TE85LF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 1SS362TE85LF Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1SS362TE85LF Diodes - General Purpose, Power, Switching are a product manufactured by Toshiba. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. 1SS362TE85LF
Manufacturer: Toshiba
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Datasheet: 1SS362TE85LF Datasheet (PDF)
Price (USD)
1640: USD 0.1586 ea
Line Total: USD 260.1 
Availability : 0
  
QtyUnit Price
1640$ 0.1586
2696$ 0.0965
2850$ 0.0913

Availability 0
Ship by Fri. 24 Oct to Tue. 28 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9602
10$ 0.7897
100$ 0.175
500$ 0.1112
1000$ 0.0771
3000$ 0.0606
9000$ 0.0518
24000$ 0.0506
45000$ 0.0455


Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0667


Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 1640
Multiples : 1
QtyUnit Price
1640$ 0.1586
2696$ 0.0965
2850$ 0.0913


Availability 0
Ship by Tue. 28 Oct to Mon. 03 Nov
MOQ : 1640
Multiples : 1
QtyUnit Price
1640$ 0.1586
2696$ 0.0965
2850$ 0.0913

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Brand
Cnhts
Hts Code
Maximum Diode Capacitance
Operating Temperature Range
Mxhts
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1SS362TE85LF from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS362TE85LF and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Unit: mm Ultra High Speed Switching Application Small package Low forward voltage : V = 0.97 V (typ.) F(3) Fast reverse recovery time : t = 1.6 ns (typ.) rr Small total capacitance : C = 0.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I mA FM 240 * Average forward current I mA O 80 * Surge current (10ms) I A FSM 1 * PD (Note 1, 3) 120 Power dissipation mW P (Note 2) 100 D T (Note 1) 150 j Junction temperature C T (Note 2) 125 j SSM T (Note 1) 55 to 150 stg JEDEC Storage temperature C T (Note 2) 55 to 125 stg JEITA TOSHIBA 1-2S1C Note: Using continuously under heavy loads (e.g. the application of high Weight: 2.4 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.36 mm 3) *: Unit rating. Total rating = Unit rating 1.5. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.63 F (1) F Forward voltage V I = 10 mA 0.75 F (2) F V V I = 100 mA 0.97 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.5 3.0 pF T R Reverse recovery time t I = 10 mA, Fig.1 1.6 4.0 ns rr F Start of commercial production 1990-10 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS362 Marking Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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