1SS302TE85LF Toshiba

1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications Unit: mm z Small package : SC-70 z Low forward voltage : V = 0.90V (typ.) F (3) z Fast reverse recovery time : t = 1.6ns (typ.) rr z Small total capacitance : C = 0.9pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 (*) mA FM Average forward current I 100 (*) mA O Surge current (10ms) I 2 (*) A JEDEC FSM Power dissipation P 100 mW JEITA SC-70 TOSHIBA 1-2P1C Junction temperature T 125 C j Weight: 0.006g (typ.) Storage temperature T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 0.7 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.60 F (1) F Forward voltage V I = 10mA 0.72 V F (2) F V I = 100mA 0.90 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 0.9 3.0 T R pF Reverse recovery time t I = 10mA, Fig.1 1.6 4.0 ns rr F Start of commercial production 1986-11 1 2014-03-01 1SS302 Marking Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2 2014-03-01