Product Information

1SS362FV,L3F(T

1SS362FV,L3F(T electronic component of Toshiba

Datasheet
Switching Diode 80V 100mA 1.2V @ 100mA 4ns VESM RoHS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.083 ea
Line Total: USD 0.42

7381 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
7381 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5
5 : USD 0.083
50 : USD 0.0637
150 : USD 0.054
500 : USD 0.0469
2500 : USD 0.041
5000 : USD 0.0381

79762 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 241
Multiples : 1
241 : USD 0.0595
1000 : USD 0.0592
2000 : USD 0.0506
8000 : USD 0.0451
16000 : USD 0.0424
32000 : USD 0.0412
64000 : USD 0.0387

7760 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 8000
Multiples : 8000
8000 : USD 0.043
16000 : USD 0.0427
24000 : USD 0.0421
40000 : USD 0.0413

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Vf - Forward Voltage
Packaging
Pd - Power Dissipation
Features Of Semiconductor Devices
Max Load Current
Capacitance
Category
Brand
LoadingGif

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Additional Infomation About Product

1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm z Small package z Excellent in forward current and forward voltage 1.20.05 characteristics: V = 0.97 V (typ.) F (3) 0.80.05 z Fast reverse recovery time: t = 1.6 ns (typ.) rr z Small total capacitance: C = 0.9 pF (typ.) T 1 Absolute Maximum Ratings (Ta = 25C) 2 3 Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O Surge current (10 ms) I 1 * A FSM 1.ANODE1 Power dissipation P 150 ** mW 2.CATHODE2 Junction temperature T 150 C j 3.CATHODE1 VESM ANODE2 Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 1-1Q1A reliability significantly even if the operating conditions (i.e. operating Weight: 1.5 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 0.7 0.5 mm **: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm (t)) 0.45 mm 0.45 mm 0.4 mm Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.63 F (1) F Forward voltage V I = 10 mA 0.75 F (2) F V V I = 100 mA 0.97 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 pF T R Reverse recovery time t I = 10 mA (Fig. 1) 1.6 4.0 ns rr F Start of commercial production 2004-09 1 2014-03-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.130.05 0.320.05 1SS362FV Fig. 1 Reverse Recovery Time (t ) Test Circuit rr Marking Equivalent Circuit (Top View) C 3 2 2014-03-01

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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