Product Information

1SS367(TPH3,F)

1SS367(TPH3,F) electronic component of Toshiba

Datasheet
Diode Small Signal Schottky 15V 0.2A 2-Pin USC T/R

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

517: USD 0.0745 ea
Line Total: USD 38.52

0 - Global Stock
MOQ: 517  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 621
Multiples : 1
621 : USD 0.0584
1000 : USD 0.058
2000 : USD 0.0575
3000 : USD 0.0563

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm z Small package z Low forward voltage: V = 0.23V (typ.) I = 5mA F F Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P * 200 mW Junction temperature T 125 C j Storage temperature T 55~125 C stg Operating temperature range T 40~100 C opr JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-1E1A temperature/current/voltage and the significant change in Weight: 0.004g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Mounted on a glass epoxy circuit board of 20 20 mm Pad dimension of 4 4 mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.18 F (1) F Forward voltage V I = 5mA 0.23 0.30 F (2) F V V I = 100mA 0.35 0.50 F (3) F Reverse current I V = 10V 20 A R R Total capacitance C V = 0, f = 1MHz 20 40 pF T R Equivalent Circuit (Top View) Marking 1 2007-11-01 1SS367 2 2007-11-01

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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