Product Information

1SS378(TE85L,F)

1SS378(TE85L,F) electronic component of Toshiba

Datasheet
Toshiba Schottky Diodes & Rectifiers 0.1A 10V Schottky Small Sig Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4735 ea
Line Total: USD 0.47

14166 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
10412 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.331
10 : USD 0.229
100 : USD 0.0949
1000 : USD 0.0688
3000 : USD 0.0499
24000 : USD 0.0486

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Ifsm - Forward Surge Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm z Low forward voltage : V = 0.23V (typ.) I = 5mA F F z Small package : SC-70 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 100 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 100 C opr JEDEC JEITA SC-70 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-2P1B temperature/current/voltage and the significant change in Weight: 0.006g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min. Typ. Max. Unit Circuit V I = 1mA 0.18 F (1) F V Forward voltage V I = 5mA 0.23 0.30 F (2) F V V I = 100mA 0.35 0.50 F (3) F V Reverse current I V = 10V 20 R R A Total capacitance C V = 0, f = 1MH 20 40 pF T R z Equivalent Circuit (Top View) Marking Start of commercial production 1993-12 1 2014-03-01 1SS378 2 2014-03-01

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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