Product Information

1SS384TE85LF

1SS384TE85LF electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers 0.1A 10V Schottky Small Sig Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2555 ea
Line Total: USD 1.26

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

1SS384TE85LF
Toshiba

1 : USD 1.2555
10 : USD 0.9643
100 : USD 0.2191
500 : USD 0.1453
1000 : USD 0.1111
3000 : USD 0.0866
9000 : USD 0.077
24000 : USD 0.0716
45000 : USD 0.0652

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Diode Capacitance
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Operating Temperature Range
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Composed of 2 independent diodes. Low forward voltage: V = 0.23V (typ.) I = 5mA F (2) F Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 100 * mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C USQ stg Operating temperature range T 40 to 100 C opr JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2K1S temperature/current/voltage and the significant change in temperature, Weight: 0.006g (typ.) etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.18 F (1) F Forward voltage V I = 5mA 0.23 0.30 V F (2) F V I = 100mA 0.35 0.50 F (3) F Reverse current I V = 10V 20 A R R Total capacitance C V = 0 V, f = 1MH 20 40 pF T R z Pin Assignment (Top View) Marking Start of commercial production 1994-09 1994-2018 1 2018-09-07 Toshiba Electronic Devices & Storage Corporation 1SS384 1994-2018 2 2018-09-07 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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