2SA1941-O(Q) Toshiba

2SA1941-O(Q) electronic component of Toshiba
2SA1941-O(Q) Toshiba
2SA1941-O(Q) Bipolar Transistors - BJT
2SA1941-O(Q)  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SA1941-O(Q) Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1941-O(Q) Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SA1941-O(Q)
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W
Datasheet: 2SA1941-O(Q) Datasheet (PDF)
Price (USD)
1: USD 1.647 ea
Line Total: USD 1.65 
Availability : 380
  
Ship by Wed. 13 Aug to Mon. 18 Aug
QtyUnit Price
1$ 1.647
10$ 1.3122
30$ 0.8595
100$ 0.6615
500$ 0.5942
1000$ 0.5587

Availability 380
Ship by Wed. 13 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.647
10$ 1.3122
30$ 0.8595
100$ 0.6615
500$ 0.5942
1000$ 0.5587

   
Manufacturer
Product Category
Technology
Mounting Style
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1941-O(Q) from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1941-O(Q) and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: V = 140 V (min) CEO Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (T = 25C) a Characteristics Symbol Rating Unit Collector-base voltage V 140 V CBO Collector-emitter voltage V 140 V CEO Emitter-base voltage V 5 V EBO Collector current I 10 A C Base current I 1 A B Collector power dissipation JEDEC P 100 W C (T = 25C) c JEITA Junction temperature T 150 C j TOSHIBA 2-16C1A Storage temperature range T 55 to 150 C stg Weight: 4.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling PrecautionsDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-06 1 2013-11-01 2SA1941 Electrical Characteristics (T = 25C) a Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 140 V, I = 0 5.0 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 5.0 A EBO EB C Collector-emitter breakdown voltage V I = 50 mA, I = 0 140 V (BR) CEO C B h FE (1) V = 5 V, I = 1 A 55 160 CE C DC current gain (Note) h V = 5 V, I = 5 A 35 83 FE (2) CE C Collector-emitter saturation voltage V I = 7 A, I = 0.7 A 0.8 2.0 V CE (sat) C B Base-emitter voltage V V = 5 V, I = 5 A 1.0 1.5 V BE CE C Transition frequency f V = 5 V, I = 1 A 30 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 320 pF ob CB E Note: h classification R: 55 to 110, O: 80 to 160 FE (1) Marking TOSHIBA A1941 Part No. (or abbreviation code) Lot No. Note 2 Characteristics indicator Note 2 : A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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