X-On Electronics has gained recognition as a prominent supplier of 2SC2713-GR(TE85L,F Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. 2SC2713-GR(TE85L,F Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

2SC2713-GR(TE85L,F Toshiba

2SC2713-GR(TE85L,F electronic component of Toshiba
2SC2713-GR(TE85L,F Toshiba
2SC2713-GR(TE85L,F Bipolar Transistors - Pre-Biased
2SC2713-GR(TE85L,F  Semiconductors

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See Product Specifications
Part No. 2SC2713-GR(TE85L,F
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R
Datasheet: 2SC2713-GR(TE85L,F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
201: USD 0.1135 ea
Line Total: USD 22.81 
Availability - 0
MOQ: 201  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 201
Multiples : 1
201 : USD 0.1135
500 : USD 0.109

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Emitter- Base Voltage Vebo
Brand
Collector-Emitter Saturation Voltage
Gain Bandwidth Product Ft
Maximum Dc Collector Current
Pd - Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SC2713-GR(TE85L,F from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC2713-GR(TE85L,F and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 120 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Base current I 20 mA B Collector power dissipation P 150 mW C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg JEDEC TO-236MOD Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-59 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-3F1A reliability significantly even if the operating conditions (i.e. operating Weight: 0.012 g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 120 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 0.1 A EBO EB C h FE DC current gain V = 6 V, I = 2 mA 200 700 CE C (Note) Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.3 V CE (sat) C B Transition frequency f V = 6 V, I = 1 mA 100 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 3.0 pF ob CB E V = 6 V, I = 0.1 mA CE C Noise figure NF 1.0 10 dB f = 1 kHz, R = 10 k G Note: h classification GR (G): 200~400, BL (L): 350~700, ( ) marking symbol FE Marking Start of commercial production 1982-10 1 2014-03-01 2SC2713 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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