X-On Electronics has gained recognition as a prominent supplier of 2SK3075(TE12L,Q) RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. 2SK3075(TE12L,Q) RF MOSFET Transistors are a product manufactured by Toshiba. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

2SK3075(TE12L,Q) Toshiba

2SK3075(TE12L,Q) electronic component of Toshiba
2SK3075(TE12L,Q) Toshiba
2SK3075(TE12L,Q) RF MOSFET Transistors
2SK3075(TE12L,Q)  Semiconductors

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See Product Specifications
Part No. 2SK3075(TE12L,Q)
Manufacturer: Toshiba
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors N-Ch Radio Freq 5A 20W 30V VDSS
Datasheet: 2SK3075(TE12L,Q) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 7.714
10 : USD 5.8886
50 : USD 5.217
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 9.5833
10 : USD 6.2758
25 : USD 5.9341
100 : USD 5.147
500 : USD 4.3806
1000 : USD 3.5936
5000 : USD 3.4693
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 18.1827
2 : USD 13.8135
4 : USD 13.0536
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SK3075(TE12L,Q) from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK3075(TE12L,Q) and other electronic components in the RF MOSFET Transistors category and beyond.

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2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF and UHFBand Power Amplifier Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. z Output Power : P 7.5W O z Power Gain : G 11.7dB P z Drain Efficiency : 50% D Absolute Maximum Ratings (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS Drain Current I 5 A D Drain Power Dissipation P 20 W D* JEDEC JEITA Channel Temperature T 150 C ch TOSHIBA 25N1A Storage Temperature Range T 45~150 C stg Weight: 0.08 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Tc = 25C When mounted on a 1.6mm glass epoxy PCB Marking 1 2007-11-01 2SK3075 Electrical Characteristics (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAXUNIT Output Power P 7.5 V = 9.6V W O DS Iidle = 50mA (V = adjust) GS Drain Efficiency 50 % D f = 520MHz, P = 500mW i Power Gain G 11.7 dB P Gate Threshold Voltage V V = 9.6V, I = 0.5mA 1.0 1.5 2.0 V th DS D Drain Cut-off Current I V = 20V, V = 0 10 A DSS DS GS Gate-Source Leakage Current I V = 10V, V = 0 5 A GSS GS DS Handling Precaution When handling individual devices, be sure that working desks, human bodies and soldering iron are protected against electrostatic electricity. RF Output Power Test Fixture 2 2007-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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