ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scienti c, commercial, medical and industrial RF power generator and ampli er applications up to 25 MHz. Speci ed 250 Volt, 13.56 MHz Characteristics: High Performance Power RF Package. Output Power = 750 Watts. Very High Breakdown for Improved Ruggedness. Gain = 17dB (Class C) Low Thermal Resistance. Ef ciency > 75% Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter ARF1519 UNIT V Drain-Source Voltage 1000 Volts DSS I 20 Amps Continuous Drain Current T = 25C D C V Gate-Source Voltage 30 Volts GS P 1350 Watts Total Device Dissipation T = 25C D C T ,T Operating and Storage Junction Temperature Range -55 to 175 J STG C T 300 Lead Temperature: 0.063 from Case for 10 Sec. L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 300A) 1000 DSS GS D Volts 1 V On State Drain Voltage (I = 10A, V = 10V) 5 7 (ON) (ON) DS D GS Zero Gate Voltage Drain Current (V = 1000V, V = 0V) 300 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 125C) 3000 DS GS C Gate-Source Leakage Current (V = 30V, V = 0V) 600 I nA GS DS GSS Forward Transconductance (V = 15V, I = 10A) g 3 14 mhos DS D fs RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) TBD V Volts isolation Gate Threshold Voltage (V = V , I = 6mA) 2 4 Volts V DS GS D (TH) GS THERMAL CHARACTERISTICS Symbol Characteristic (per package unless otherwise noted) MIN TYP MAX UNIT R Junction to Case 0.13 JC C/W R Case to Sink (Use High Ef ciency Thermal Joint Compound and Planar Heat Sink Surface.) 0.09 CS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - ARF1519 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 4600 5600 Input Capacitance iss V = 0V GS C pF Output Capacitance 310 350 V = 150V oss DS f = 1 MHz C Reverse Transfer Capacitance 90 120 rss FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Ampli er Power Gain f = 13.56MHz 17 20 dB PS V = 0V V = 200V 70 75 Drain Ef ciency GS DD % P = 750W out Electrical Ruggedness VSWR 10:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the speci cations and information contained herein. Per transistor section unless otherwise speci ed. 60 V > I (ON) x R (ON)MAX. DS D DS 250 SEC. PULSE TEST C <0.5 % DUTY CYCLE iss 50 T = -55C J 40 C oss 30 20 C rss 10 T = +25C J T = +125C J 0 .1 1 10 100 200 0 1 2 3 4 5 6 7 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V , GATE-TO-SOURCE VOLTAGE (VOLTS) DS GS Figure 1, Typical Capacitance vs. Drain-to-Source Voltage Figure 2, Typical Transfer Characteristics 050-4935 Rev B 2-2008 CAPACITANCE (pf) I , DRAIN CURRENT (AMPERES) D