DF2B12M1CT(TPL3) Toshiba

DF2B12M1CT ESD Protection Diodes Silicon Epitaxial Planar DF2B12M1CTDF2B12M1CTDF2B12M1CTDF2B12M1CT 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Pin 1 2: Pin 2 CST2 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V 8 kV ESD Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2011-09 2015-02-27 1 Rev.6.0DF2B12M1CT 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa V : Working peak reverse RWM voltage V : Reverse breakdown voltage BR I : Reverse breakdown current BR I : Reverse current R V : Clamp voltage C I : Peak pulse current PP R : Dynamic resistance DYN Fig. Fig. Fig. Fig. 4.14.14.14.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V 8 V RWM Reverse breakdown voltage V I = 1 mA 10 V BR BR Reverse current I V = 8 V 0.05 A R RWM Clamp voltage V (Note 1) I = 1 A 18 V C PP Dynamic resistance R (Note 2) 2.5 DYN Total capacitance C (Note 3) V = 0 V, f = 1 MHz 0.3 0.5 pF t R Note 1: Based on IEC61000-4-5 8/20 s pulse. Note 2: TLP parameter: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using a least-squares fit of TLP characteristics at I between 3 A to 8 A. PP Note 3: Guaranteed by design. 5. 5. 5. 5. Guaranteed ESD Protection (Note)Guaranteed ESD Protection (Note)Guaranteed ESD Protection (Note)Guaranteed ESD Protection (Note) Test Condition ESD Protection IEC61000-4-2 (Contact discharge) 8 kV Note: Criterion: No damage to devices. 2015-02-27 2 Rev.6.0