GT50JR22 Discrete IGBTs Silicon N-Channel IGBT GT50JR22GT50JR22GT50JR22GT50JR22 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : t = 0.05 s (typ.) (I = 50 A) f C FWD : t = 0.35 s (typ.) (I = 15 A) rr F (5) Low saturation voltage : V = 1.55 V (typ.) (I = 50 A) CE(sat) C (6) High junction temperature : T = 175 (max) j 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-3P(N) Start of commercial production 2012-03 2014-01-06 1 Rev.2.0GT50JR22 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25, unless otherwise specified), unless otherwise specified), unless otherwise specified), unless otherwise specified) aaaa Characteristics Symbol Rating Unit Collector-emitter voltage V 600 V CES Gate-emitter voltage V 25 GES Collector current (DC) (T = 25) I 50 A c C Collector current (DC) (T = 100) 44 c Collector current (1 ms) I 100 CP Diode forward current (DC) I 40 F Diode forward current (100 s) I 100 FP Collector power dissipation (T = 25) P 230 W c C Collector power dissipation (T = 100) 115 c Junction temperature (Note 1) T 175 j Storage temperature T -55 to 175 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT. Note 1: Ensure that the junction temperature does not exceed 175 . 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Junction-to-case thermal resistance R 0.65 /W th(j-c) 2014-01-06 2 Rev.2.0