HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) HN2A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : V = 50 V, I = 150 mA (max) CEO C High h : h = 120 to 400 FE FE Excellent h linearity : FE h (I = 0.1 mA) / (I = 2 mA) = 0.95 (typ.) FE C C Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 150 mA C Base current I 30 mA B JEDEC Collector power dissipation P (Note 3) 200 mW C JEITA T (Note 1) 150 j TOSHIBA 2-2J1B Junction temperature C T (Note 2) 125 j Weight: 6.8mg T (Note 1) 55 to 150 stg Storage temperature range C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Total rating, Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.32 mm 6) Start of commercial production 1992-01 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation HN2A01FU Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 50 V, I = 0 A 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 A 0.1 A EBO EB C DC current gain h V = 6 V, I = 2 mA 120 400 FE (Note) CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 1 mA 80 MH T CE C z Collector output capacitance C V = 10 V, I = 0 A, f = 1 MH 4 7 pF ob CB E z Note: hFE classification Y(Y): 120 to 240, GR(G): 200 to 400 ( ) marking symbol Marking Equivalent Circuit (top view) 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation