JDH2S02SL Schottky Barrier Diode Silicon Epitaxial Planar JDH2S02SLJDH2S02SLJDH2S02SLJDH2S02SL 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Radio-Frequency Power Detectors 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures Suitable for reducing the product size due to the use of a small two-pin package supporting high-density mounting 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 ))) a aaa Characteristics Symbol Note Rating Unit Reverse voltage V 10 V R Forward current I 10 mA F Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be using proper antistatic precautions for the worktable, operator, solder iron and so on. Start of commercial production 2015-09 2015 Toshiba Corporation 2015-11-13 1 Rev.2.0JDH2S02SL 5. 5. 5. 5. Electrical Characteristics (Note) (Unless otherwise specified, TElectrical Characteristics (Note) (Unless otherwise specified, TElectrical Characteristics (Note) (Unless otherwise specified, TElectrical Characteristics (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.24 V F F Forward current I V = 0.5 V 2 mA F F Reverse current I V = 0.5 V 25 A R R Total capacitance C V = 0.2 V, f = 1 MHz 0.25 pF t R Note: Signal level for capacitance measurement: Vsig = 20 mVrms 6. 6. MarkingMarking 6. 6. MarkingMarking 7. 7. 7. 7. Usage ConsiderationsUsage ConsiderationsUsage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. 8. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) 8. 8. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) (Unit: mm)(Unit: mm)(Unit: mm)(Unit: mm) 2015 Toshiba Corporation 2015-11-13 2 Rev.2.0