RN1106MFV,L3F Toshiba

RN1106MFV,L3F electronic component of Toshiba
RN1106MFV,L3F Toshiba
RN1106MFV,L3F Bipolar Transistors - Pre-Biased
RN1106MFV,L3F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RN1106MFV,L3F Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. RN1106MFV,L3F Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. RN1106MFV,L3F
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
Datasheet: RN1106MFV,L3F Datasheet (PDF)
Price (USD)
10: USD 0.1104 ea
Line Total: USD 1.1 
Availability : 7003
  
Ship by Fri. 15 Aug to Wed. 20 Aug
QtyUnit Price
10$ 0.1104
100$ 0.0864
300$ 0.0559
1000$ 0.0443
5000$ 0.0394
8000$ 0.037

Availability 7003
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.1104
100$ 0.0864
300$ 0.0559
1000$ 0.0443
5000$ 0.0394
8000$ 0.037

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Maximum Operating Frequency
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Emitter- Base Voltage Vebo
Brand
Channel Mode
Maximum Dc Collector Current
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RN1106MFV,L3F from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RN1106MFV,L3F and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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The RN1106MFV,L3F is a Pre-Biased Bipolar Transistor NPN Single IC manufactured by Toshiba. It is designed for use in signal processing circuits, and its main application is to serve as a voltage amplifier. It has a Collector-Emitter Voltage (VCEO) of 50V, an Emitter-Base Voltage (VEBO) of 6V, and a Collector Current (IC) of 100mA. Its Beta (hFE) ranges from 40 to 250, and its 2N2222 datasheet marked Maximum Power Dissipation (PD) is 500mW. It features low noise, low collector-emitter saturation voltage, fast switching speed, and easy-to-handle characteristics.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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