RN2110MFV, RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2110MFV, RN2111MFV Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN1110MFV, RN1111MFV Equivalent Circuit 1.BASE 2.EMITTER VESM 3.COLLECTOR JEDEC Absolute Maximum Ratings (Ta = 25C) JEITA TOSHIBA 1-1Q1S Characteristic Symbol Rating Unit Weight: 1.5 mg (typ.) Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Collector power dissipation P (Note 1) 150 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm) Land Pattern Dimensions (for reference only) 0.5 Unit mm 0.45 1.15 0.4 0.45 0.4 0.4 Start of commercial production 2005-02 2016-2019 2019-01-07 1 Toshiba Electronic Devices & Storage Corporation RN2110MFV, RN2111MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current I V = 50 V, I = 0 A 100 nA CBO CB E Emitter cutoff current I V = 5 V, I = 0 A 100 nA EBO EB C DC current gain h V = 5 V, I = 1 mA 120 400 FE CE C Collector-emitter saturation voltage V I = 5 mA, I = 0.5 mA 0.1 0.3 V CE (sat) C B Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz ob CB E 0.9 pF RN2110MFV 3.29 4.7 6.11 Input resistor R1 k 7 10 13 RN2111MFV 2016-2019 2019-01-07 2 Toshiba Electronic Devices & Storage Corporation