RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. z Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. z A wide range of resistor values is available for use in various circuits. Equivalent Circuit 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) JEDEC JEITA Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-2P1D Weight: 0.003g(typ.) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Collector power dissipation P* 100 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Equivalent Circuit (top view) 5 4 Q1 Q2 Start of commercial production 1 2 3 2001-06 1 2014-03-01 RN2712JE,RN2713JE Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 50V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 5V, I = 0 100 nA EBO EB C DC current gain h V = 5V, I = 1mA 120 400 FE CE C Collector-emitter saturation voltage V I = 5mA, I = 0.25mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10V, I = 5mA 200 MHz T CE C Collector output capacitance C V = 10V, I = 0, f = 1MHz 3 6 pF ob CB E RN2712JE 15.4 22 28.6 Input resistor R1 k RN2713JE 32.9 47 61.1 2 2014-03-01