RN4985,LF(CT Toshiba

RN4985 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4985 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resister Values R1: 2.2k R2: 47k (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25C) JEDEC Characteristic Symbol Rating Unit JEITA TOSHIBA 2-2J1A Collector-base voltage V 50 V CBO Weight: 6.8 mg (typ.) Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Q2 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Start of commercial production 1992-10 1 2014-03-01 RN4985 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector power dissipation P * 200 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Marking Equivalent Circuit (Top View) 2 2014-03-01