X-On Electronics has gained recognition as a prominent supplier of SSM6K504NU,LF mosfet across the USA, India, Europe, Australia, and various other global locations. SSM6K504NU,LF mosfet are a product manufactured by Toshiba. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SSM6K504NU,LF

SSM6K504NU,LF electronic component of Toshiba
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See Product Specifications
Part No.SSM6K504NU,LF
Manufacturer: Toshiba
Category:MOSFET
Description: MOSFET Small Signal MOSFET
Datasheet: SSM6K504NU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.094 ea
Line Total: USD 282

Availability - 11640
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
87300 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.3198
6000 : USD 0.2437
9000 : USD 0.1893
15000 : USD 0.1595
24000 : USD 0.1453
30000 : USD 0.1348

11640 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.094
6000 : USD 0.0924
12000 : USD 0.0908
18000 : USD 0.0892
24000 : USD 0.0876

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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SSM6K504NU MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM6K504NUSSM6K504NUSSM6K504NUSSM6K504NU 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : R = 26 m (max) ( V = 4.5 V) DS(ON) GS R = 19.5 m (max) ( V = 10 V) DS(ON) GS 3. 3. 3. 3. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1.2.5.6 Drain 3. Gate 4. Source UDFN6B 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 9 A D Drain current (pulsed) (Note 1,2) I 18 DP Power dissipation (Note 3) P 1.25 W D Power dissipation t 10 s (Note 3) P 2.5 W D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty 1% Note 3: Device mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad : 645 mm2) Start of commercial production 2012-07 2014-04-04 1 Rev.2.0SSM6K504NU Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2014-04-04 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TS4

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