Product Information

TC75S51F,LF

TC75S51F,LF electronic component of Toshiba

Datasheet
Operational Amplifiers - Op Amps CMOS Op Amp
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4912 ea
Line Total: USD 0.49

6138 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2425 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

TC75S51F,LF
Toshiba

5 : USD 0.2146
50 : USD 0.1873
150 : USD 0.1755
500 : USD 0.1608
3000 : USD 0.1543
6000 : USD 0.1503

6138 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

TC75S51F,LF
Toshiba

1 : USD 0.4912
10 : USD 0.3713
100 : USD 0.2112
1000 : USD 0.1649
3000 : USD 0.1448
9000 : USD 0.1364
24000 : USD 0.1317
45000 : USD 0.1293
99000 : USD 0.1269

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Number of Channels
Supply Voltage - Max
Supply Voltage - Min
GBP - Gain Bandwidth Product
SR - Slew Rate
Vos - Input Offset Voltage
Ib - Input Bias Current
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
CMRR - Common Mode Rejection Ratio
Series
Packaging
Amplifier Type
Product
Brand
Ios - Input Offset Current
Product Type
Factory Pack Quantity :
Subcategory
Vcm - Common Mode Voltage
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

TC75S51F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S51F, TC75S51FU Single Operational Amplifier TC75S51F The TC75S51F/TC75S51FU is a CMOS single-operation amplifier which incorporates a phase compensation circuit. It is designed with a low-voltage and low-current power supply this differentiates this device from general- purpose bipolar op-amps. Features Low-voltage operation : V = 0.75 to 3.5 V or 1.5 to 7 V DD (SMV) Low-current power supply : I (V = 3 V) = 60 A (typ.) TC75S51FU DD DD Built-in phase-compensated op-amp, obviating the need for any external device Ultra-compact package Absolute Maximum Ratings (Ta = 25C) (USV) Characteristics Symbol Rating Unit Weight Supply voltage V , V 7 V DD SS SSOP5-P-0.95 : 0.014 g (typ.) Differential input voltage DV 7 V IN SSOP5-P-0.65A : 0.006 g (typ.) Input voltage V V to V V IN DD SS Power dissipation P 200 mW D Operating temperature T 40 to 85 C opr Storage temperature T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1993-07 2019 2019-09-11 1 Toshiba Electronic Devices & Storage Corporation TC75S51F/FU Marking (top view) Pin Connection (top view) V OUT 5 4 DD 5 4 S C 1 2 3 IN (+) V IN () SS 1 2 3 Electrical Characteristics DC Characteristics (V = 3.0 V, V = GND, Ta = 25C) DD SS Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit Input offset voltage V 1 R = 1 k, R = 100 k 2 10 mV IO S F Input offset current I 1 pA IO Input bias current I 1 pA I Common mode input voltage CMV 2 R = 1 k, R = 100 k 0 2.5 V IN S F Voltage gain (open loop) G 60 70 dB V 3 R 100 k 2.9 VOH L Maximum output voltage V V 4 R 100 k 0.1 OL L Common mode input signal CMRR 2 V = 0.0 to 2.5 V 55 65 dB IN rejection ratio Supply voltage rejection ratio SVRR 1 V = 1.5 to 7.0 V 60 70 dB DD Supply current I 5 60 200 A DD DC Characteristics (V = 1.5 V, V = GND, Ta = 25C) DD SS Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit Input offset voltage V 1 R = 10 k, R = 100 k 2 10 mV IO S F Input offset current I 1 pA IO Input bias current I 1 pA I Common mode input voltage CMV 2 R = 10 k, R = 100 k 0 1.0 V IN S F Voltage gain (open loop) G 60 70 dB V V 3 R 100 k 1.4 OH L Maximum output voltage V V 4 R 100 k 0.1 OL L Supply current I 5 50 150 A DD Note: For this device, please use a source current of no more than 70 A. 2019 2019-09-11 2 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8542.33.00 43 No -- Amplifiers

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits Digital.

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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