Product Information

TJ60S04M3L(T6L1,NQ

TJ60S04M3L(T6L1,NQ electronic component of Toshiba

Datasheet
MOSFET P-Ch MOS -60A -40V 90W 6510pF 0.0063
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.5754 ea
Line Total: USD 1150.8

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2000
Multiples : 2000
2000 : USD 0.8797
4000 : USD 0.871
6000 : USD 0.8623
8000 : USD 0.8537
10000 : USD 0.8451
12000 : USD 0.8366
20000 : USD 0.8284
30000 : USD 0.82
50000 : USD 0.8119

0 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 4.7638
10 : USD 1.7295
25 : USD 1.6259
100 : USD 1.4188
250 : USD 1.367
500 : USD 1.1392
1000 : USD 1.0667

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

TJ60S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S04M3LTJ60S04M3LTJ60S04M3LTJ60S04M3L 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 4.8 m (typ.) (V = -10 V) DS(ON) GS (3) Low leakage current: I = -10 A (max) (V = -40 V) DSS DS (4) Enhancement mode: V = -2.0 to -3.0 V (V = -10 V, I = -1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 2011-03 2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.7.0TJ60S04M3L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -40 V DSS Gate-source voltage V -20/+10 GSS Drain current (DC) (Note 1) I -60 A D Drain current (pulsed) (Note 1) I -120 DP Power dissipation (T = 25) P 90 W c D Single-pulse avalanche energy (Note 2) E 146 mJ AS Avalanche current I -60 A AR Channel temperature (Note 3) T 175 ch Storage temperature (Note 3) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 1.65 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: V = -25 V, T = 25 (initial), L = 42 H, R = 25 , I = -60 A DD ch G AR Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.7.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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