Product Information

TK10P60W,RVQ

Hot TK10P60W,RVQ electronic component of Toshiba

Datasheet
Toshiba MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6: USD 1.6094 ea
Line Total: USD 9.66

2406 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 6  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2406 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

TK10P60W,RVQ
Toshiba

1 : USD 1.6094
10 : USD 1.5398
100 : USD 1.4282
250 : USD 1.3956
500 : USD 1.3628
1000 : USD 1.3355
2000 : USD 1.3355
4000 : USD 1.3355

869 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

TK10P60W,RVQ
Toshiba

1 : USD 2.231
10 : USD 2.001
100 : USD 1.7135
250 : USD 1.702
500 : USD 1.541
1000 : USD 1.472
2000 : USD 1.472
4000 : USD 1.449

2406 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 6
Multiples : 1

Stock Image

TK10P60W,RVQ
Toshiba

6 : USD 1.6094
10 : USD 1.5398
100 : USD 1.4282
250 : USD 1.3956
500 : USD 1.3628
1000 : USD 1.3355

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

TK10P60W MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60WTK10P60WTK10P60WTK10P60W 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.327 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.7 to 3.7 V (V = 10 V, I = 0.5 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source DPAK Start of commercial production 2012-09 2014-09-17 1 Rev.4.0TK10P60W 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 9.7 A D Drain current (pulsed) (Note 1) I 38.8 DP Power dissipation (T = 25) P 80 W c D Single-pulse avalanche energy (Note 2) E 121 mJ AS Avalanche current I 2.5 A AR Reverse drain current (DC) (Note 1) I 9.7 DR Reverse drain current (pulsed) (Note 1) I 38.8 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 1.57 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 33.9 mH, R = 25 , I = 2.5 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-09-17 2 Rev.4.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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