Product Information

TK14G65W,RQ

TK14G65W,RQ electronic component of Toshiba

Datasheet
MOSFET Power MOSFET N-Channel
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.9341 ea
Line Total: USD 3.93

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1000
Multiples : 1

Stock Image

TK14G65W,RQ
Toshiba

1000 : USD 1.3071

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1000
Multiples : 1000

Stock Image

TK14G65W,RQ
Toshiba

1000 : USD 1.9047
2000 : USD 1.8018
4000 : USD 1.6989
6000 : USD 1.5959
8000 : USD 1.4929

0 - WHS 3


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

TK14G65W,RQ
Toshiba

1 : USD 2.7216
10 : USD 2.3019
100 : USD 1.8657
500 : USD 1.5237
1000 : USD 1.3143
2000 : USD 1.2096
5000 : USD 1.1979
10000 : USD 1.1979

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

TK14G65W MOSFETs Silicon N-Channel MOS (DTMOS) TK14G65WTK14G65WTK14G65WTK14G65W 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.22 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.5 to 3.5 V (V = 10 V, I = 0.69 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source D2PAK 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 650 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 13.7 A D Drain current (pulsed) (Note 1) I 54.8 DP Power dissipation (T = 25) P 130 W c D Single-pulse avalanche energy (Note 2) E 194 mJ AS Avalanche current I 3.7 A AR Reverse drain current (DC) (Note 1) I 13.7 DR Reverse drain current (pulsed) (Note 1) I 54.8 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2013-10 2014-02-25 1 Rev.2.0TK14G65W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.962 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 25 mH, R = 25 , I = 3.7 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-25 2 Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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