Product Information

TK160F10N1L,LQ

TK160F10N1L,LQ electronic component of Toshiba

Datasheet
MOSFET U-MOSVIII-H 100V 160A 122nC MOSFET

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.3882 ea
Line Total: USD 1388.2

0 - Global Stock
MOQ: 1000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1000
Multiples : 1000
1000 : USD 2.5216
2000 : USD 2.4961
3000 : USD 2.4706
4000 : USD 2.4465
5000 : USD 2.421
6000 : USD 2.3969
10000 : USD 2.3741
20000 : USD 2.3499
50000 : USD 2.3258

0 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 8.0137
10 : USD 2.885
25 : USD 2.7247
100 : USD 2.3186
500 : USD 1.9126
1000 : USD 1.5707
2000 : USD 1.4318
5000 : USD 1.3783

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif

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TK160F10N1L MOSFETs Silicon N-channel MOS (U-MOS-H) TK160F10N1LTK160F10N1LTK160F10N1LTK160F10N1L 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 2.0 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (4) Enhancement mode: V = 2.5 to 3.5 V (V = 10 V, I = 1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) Start of commercial production 2016-04 2016-2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0TK160F10N1L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 160 A D Drain current (pulsed) (Note 1) I 480 DP Power dissipation (T = 25 ) (Note 2) P 375 W c D Single-pulse avalanche energy (Note 3) E 466 mJ AS Single-pulse avalanche current I 160 A AS Channel temperature (Note 4) T 175 ch Storage temperature (Note 4) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2016-2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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