Product Information

TK16E60W,S1VX

TK16E60W,S1VX electronic component of Toshiba

Datasheet
Toshiba MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.7642 ea
Line Total: USD 6.76

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 50
Multiples : 1
50 : USD 2.2058
100 : USD 2.1838
250 : USD 2.1618
500 : USD 2.1402
1000 : USD 2.1189
2500 : USD 2.0976
3000 : USD 2.0766
5000 : USD 2.0559
10000 : USD 2.0354

0 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 3.575
10 : USD 3.0828
100 : USD 2.478
500 : USD 2.036
1000 : USD 1.687
2000 : USD 1.5706
5000 : USD 1.5124

0 - WHS 3


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 6.7642
10 : USD 2.4371
50 : USD 2.2879
100 : USD 1.9497
500 : USD 1.6015
1000 : USD 1.323
2500 : USD 1.2036
5000 : USD 1.1639

0 - WHS 4


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 4
Multiples : 1
4 : USD 2.0922
10 : USD 1.9475

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
TK16G60W,RVQ electronic component of Toshiba TK16G60W,RVQ

Toshiba MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Stock : 20000

TK16N60W,S1VF electronic component of Toshiba TK16N60W,S1VF

N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-247
Stock : 89

TK16J60W,S1VQ electronic component of Toshiba TK16J60W,S1VQ

Toshiba MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
Stock : 0

TK16N60W,S1VF(S electronic component of Toshiba TK16N60W,S1VF(S

Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO247-3
Stock : 90

TK16J60W,S1VQ(O electronic component of Toshiba TK16J60W,S1VQ(O

TK16J60WS1VQO toshiba amplifiers audio integrated circuits ics semiconductors
Stock : 25

TK16E60W,S1VX(S electronic component of Toshiba TK16E60W,S1VX(S

Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
Stock : 50

TK16G60W5,RVQ electronic component of Toshiba TK16G60W5,RVQ

MOSFET PWR MOSFET PD=130W F=1MHZ
Stock : 555

TK16J60W5,S1VQ electronic component of Toshiba TK16J60W5,S1VQ

MOSFET TO-3PNOS PD=130W 1MHz PWR MOSFET TRNS
Stock : 0

TK16J60W,S1VE electronic component of Toshiba TK16J60W,S1VE

MOSFET TO-3PN PD=130W 1MHz PWR MOSFET TRNS
Stock : 161

TK16V60W5,LVQ electronic component of Toshiba TK16V60W5,LVQ

MOSFET PWR MOSFET DTMOS PD=139W F=1
Stock : 0

Image Description
TK18A50D(STA4,Q,M) electronic component of Toshiba TK18A50D(STA4,Q,M)

Toshiba MOSFET N-Ch MOS 18A 500V 50W 2600pF 0.27
Stock : 58

FCD380N60E electronic component of ON Semiconductor FCD380N60E

Fairchild Semiconductor MOSFET 600V N-Channel MOSFET
Stock : 0

TK22E10N1,S1X electronic component of Toshiba TK22E10N1,S1X

Toshiba MOSFET N-Ch PWR FET 52A 72W 100V VDSS
Stock : 0

FCD4N60TM electronic component of ON Semiconductor FCD4N60TM

N-Channel 600 V 3.9A (Tc) 50W (Tc) Surface Mount TO-252AA
Stock : 15

TK25A60X5,S5X electronic component of Toshiba TK25A60X5,S5X

N-Channel 600 V 25A (Ta) 45W (Tc) Through Hole TO-220SIS
Stock : 543

FCD5N60TM electronic component of ON Semiconductor FCD5N60TM

Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Stock : 2500

TK25E60X5,S1X electronic component of Toshiba TK25E60X5,S1X

MOSFET Power MOSFET N-Channel
Stock : 0

FCD5N60TM_WS electronic component of ON Semiconductor FCD5N60TM_WS

Fairchild Semiconductor MOSFET 600V 4.6A N-Channel
Stock : 2172

FCD7N60TM electronic component of ON Semiconductor FCD7N60TM

MOSFET N-CH/600V/7A SuperFET
Stock : 20628

TK25N60X5,S1F electronic component of Toshiba TK25N60X5,S1F

MOSFET Power MOSFET N-Channel
Stock : 0

TK16E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK16E60WTK16E60WTK16E60WTK16E60W 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.16 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.7 to 3.7 V (V = 10 V, I = 0.79 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 15.8 A D Drain current (pulsed) (Note 1) I 63.2 DP Power dissipation (T = 25) P 130 W c D Single-pulse avalanche energy (Note 2) E 194 mJ AS Avalanche current I 4.0 A AR Reverse drain current (DC) (Note 1) I 15.8 DR Reverse drain current (pulsed) (Note 1) I 63.2 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-09 2013-12-25 1 Rev.3.0TK16E60W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.962 /W th(ch-c) Channel-to-ambient thermal resistance R 83.3 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 21.2 mH, R = 25 , I = 4.0 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2013-12-25 2 Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted