SQD70140EL www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 100 DS Package with low thermal resistance R ( ) at V = 10 V 0.0150 DS(on) GS and UIS tested 100 % R g R ( ) at V = 4.5 V 0.0190 DS(on) GS AEC-Q101 qualified I (A) 30 D Material categorization: Configuration Single for definitions of compliance please see Package TO-252 www.vishay.com/doc 99912 D TOTO-252 Drain connected to tab G S S D G N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS a T = 25 C 30 C Continuous Drain Current I D T = 125 C 27 C a Continuous Source Current (Diode Conduction) I 30 A S b Pulsed Drain Current I 120 DM Single Pulse Avalanche Current I 34 AS L = 0.1 mH Single Pulse Avalanche Energy E 58 mJ AS T = 25 C 71 C b Maximum Power Dissipation P W D T = 125 C 23 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 2.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S16-0555-Rev. A, 28-Mar-16 Document Number: 78633 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQD70140EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 100 V - - 1.0 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 100 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 100 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 30 - - A D(on) GS DS V = 10 V I = 30 A - 0.0120 0.0150 GS D V = 10 V I = 30 A, T = 125 C - - 0.0255 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 30 A, T = 175 C - - 0.0320 GS D J V = 4.5 V I = 20 A - 0.0145 0.0190 GS D b Forward Transconductance g V = 15 V, I = 25 A - 58 - S fs DS D b Dynamic Input Capacitance C - 1565 2100 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz8001100 pF oss GS DS Reverse Transfer Capacitance C -65100 rss c Total Gate Charge Q -26.5 40 g c Gate-Source Charge Q -5V = 10 V V = 50 V, I = 30 A.5- nC gs GS DS D c Gate-Drain Charge Q -5.5- gd Gate Resistance R f = 1 MHz 1.1 2.3 3.5 g c Turn-On Delay Time t -7 15 d(on) c Rise Time t -19 30 V = 50 V, R = 1.67 r DD L ns c I 30 A, V = 10 V, R = 1 Turn-Off Delay Time t -1D GEN g830 d(off) c Fall Time t -5995 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 120 A SM Forward Voltage V I = 30 A, V = 0 V - 0.94 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0555-Rev. A, 28-Mar-16 Document Number: 78633 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000