Product Information

TLP187(TPL,E

TLP187(TPL,E electronic component of Toshiba

Datasheet
Toshiba Transistor Output Optocouplers High VCEO Darlington 300V 150mA 3750Vrms

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6046 ea
Line Total: USD 0.6

2017 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2017 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

TLP187(TPL,E
Toshiba

1 : USD 0.6046
10 : USD 0.5992
25 : USD 0.545
100 : USD 0.45
250 : USD 0.441
500 : USD 0.441
1000 : USD 0.441

2017 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 18
Multiples : 1

Stock Image

TLP187(TPL,E
Toshiba

18 : USD 0.5992
25 : USD 0.545
100 : USD 0.45
250 : USD 0.441

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rise Time
Current Transfer Ratio
Fall Time
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Brand Category
LoadingGif

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TLP187 Photocouplers Infrared LED & Photo Transistor TLP187TLP187TLP187TLP187 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Programmable Logic Controllers (PLCs) I/O Interface Boards Home Electric Appliances 2. 2. 2. 2. GeneralGeneralGeneralGeneral TLP187 is a photocoupler that consist of an infrared LED optically coupled to a darlington transistor. Housed in a SO6 package, it has a high noise immunity and a high insulation. With the high breakdown voltage between the collector and emitter, TLP187 is suitable in applications such as 100 VDC output modules of programmable controllers. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Collector-emitter voltage: 300 V (min) (2) Current transfer ratio: 1000 % (min) (3) Isolation voltage: 3750 Vrms (min) (4) Operation temperature range:-55 to 110 (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). 4. 4. 4. 4. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1: Anode 3: Cathode 4: Emitter 6: Collector 11-4M1S Start of commercial production 2012-10 2015-2019 2019-11-19 1 Toshiba Electronic Devices & Storage Corporation Rev.5.0TLP187 5. 5. 5. 5. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 5.1. 5.1. Mechanical ParametersMechanical Parameters 5.1. 5.1. Mechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. 6. 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 90 ) I /T -1.43 mA/ a F a Input forward current (pulsed) I (Note 1) 1 A FP Input reverse voltage V 5 V R Input power dissipation P 100 mW D Input power dissipation (T 90 ) P /T -2.86 mW/ a D a derating Junction temperature T 125 j Detector Collector-emitter voltage V 300 V CEO Emitter-collector voltage V 0.3 ECO Collector current I 150 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.5 mW/ a C a derating Junction temperature T 125 j Common Operating temperature T -55 to 110 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 200 mW T Isolation voltage AC, 60 s, R.H. 60 % BV (Note 2) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 100 s, f = 1000 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 2015-2019 2019-11-19 2 Toshiba Electronic Devices & Storage Corporation Rev.5.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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