Product Information

TLP2309(E(T

TLP2309(E(T electronic component of Toshiba

Datasheet
High Speed Optocouplers
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

125: USD 0.8148 ea
Line Total: USD 101.85

606 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 125  Multiples: 125
Pack Size: 125

 More Buying Options & Price Grid(s)

Availability Price Quantity
608 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

TLP2309(E(T
Toshiba

1 : USD 1.092
5 : USD 0.9802
21 : USD 0.7891
57 : USD 0.7462
625 : USD 0.7358

319 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 45
Multiples : 1

Stock Image

TLP2309(E(T
Toshiba

45 : USD 0.8734
50 : USD 0.7892
100 : USD 0.7119

606 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 125
Multiples : 125

Stock Image

TLP2309(E(T
Toshiba

125 : USD 0.8148
1000 : USD 0.7816
2000 : USD 0.7637
2500 : USD 0.7222
3000 : USD 0.7077

96 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 44
Multiples : 1

Stock Image

TLP2309(E(T
Toshiba

44 : USD 0.8536
50 : USD 0.8217

Read More Specifications

     
Manufacturer
Product Category
Series
Vf - Forward Voltage
If - Forward Current
Brand
Product Type
Subcategory
Taric
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Additional Infomation About Product

TLP2309 Photocouplers GaAAs Infrared LED & Photo IC TLP2309TLP2309TLP2309TLP2309 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Transistor Inverters Switching Power Supplies High-Speed Digital Interfacing 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2309 consists of a high-output GaAAs light-emitting diode coupled with a high-speed photo- diode-transistor chip. It is housed in the SO6 package.The TLP2309 guarantees operation at up to 110 and on supplies both 3.3 V and 5 V. Also, since the TLP2309 guarantees a creepage / clearance distance 5.0 mm and internal isolation thickness 0.4 mm, this product is in the reinforced insulation class according to international safety standards. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Inverter logic type (open collector output) (2) Package: SO6 (3) Operating temperature: -40 to 110 (4) Supply voltage: 3.3 V / 5 V (5) Data transfer rate: 1 Mbit/s (typ.) (NRZ) (6) Common-mode transient immunity: 15 kV/ s (min) (7) Isolation voltage: 3750 Vrms (min) (8) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). Start of commercial production 2011-04 2015 Toshiba Corporation 2015-11-27 1 Rev.7.0TLP2309 4. 4. 4. 4. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1: Anode 3: Cathode 4: GND 5: V (Output) O 6: V CC 11-4L1S 5. 5. 5. 5. Internal CircuitInternal CircuitInternal CircuitInternal Circuit 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. Truth Table 6.1. 6.1. 6.1. Truth TableTruth TableTruth Table Input LED Output H ON L L OFF H 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 2015 Toshiba Corporation 2015-11-27 2 Rev.7.0

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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