TLP2530,TLP2531 TOSHIBA Photocoupler GaAAs Ired & Photo IC TLP2530, TLP2531 Digital Logic Isolation Unit in mm Line Receiver Power Supply Control Switching Power Supply Transistor Inverter The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a pair of GaAAs light emitting diode and integrated photodetector. This unit is 8lead DIP. Separate connection for the photodiode bias and output transistor collectors improve the speed up to a hundred times that of a conventional phototransistor coupler by reducing the basecollector capacitance. z TTL compatible z Switching speed: t =0.3s, t =0.3s(typ.) pHL pLH ( R =1.9k ) L TOSHIBA 1110C4 z Guaranteed performance over temp: 0~70C Weight: 0.54 g (typ.) z Isolation voltage: 2500 Vrms(min.) z UL recognized: UL1577, file no. E67349 Pin Configuration (top view) 1 8 2 7 Schematic 3 6 I CC 4 5 I F1 V CC 8 I O1 + 1. : Anode.1 1 V F1 2. : Cathode.1 V O1 7 3. : Cathode.2 2 4. : Anode.2 I F2 I O2 5. : Gnd + 6. : V (output 2) O2 V O2 4 V 7. : V (output 1) O1 F2 6 GND 8. : V CC 3 5 1 2007-10-01 TLP2530,TLP2531 Absolute Maximum Ratings Characteristic Symbol Rating Unit Forward current(each channel) I 25 mA F (Note 1) Pulse forward current I 50 mA FP (Each Channel) (Note 2) Total pulse forward current I 1 A FPT (each channel) (Note 3) Reverse voltage(each channel) V 5 V R Diode power dissipation P 45 mW D (each channel) (Note 4) Output current(each channel) I 8 mA O Peak output current I 16 mA OP (each channel) Supply voltage V 0.5~15 V CC Output voltage(each channel) V 0.5~15 V O Output power dissipation P 35 mW O (each channel) (Note 5) Operating temperature range T 55~100 C opr Storage temperature range T 55~125 C stg Lead solder temperature(10s)** T 260 C sol Isolation voltage BV 2500 Vrms S (AC, 1min., R.H. 60%) (Note 7) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.8mA above 70C. (Note 2) 50% duty cycle, 1ms pulse width. Derate 1.6mA / C above 70C. (Note 3) Pulse width 1 s, 300pps. (Note 4) Derate 0.9mW / C above 70C. (Note 5) Derate 1mW / C above 70C. **2mm below seating plane. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V 0 12 V CC Forward current, each channel I 16 25 mA F Operating temperature T 25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 Detector LED