TPW2900ENH MOSFETs Silicon N-channel MOS (U-MOS-H) TPW2900ENHTPW2900ENHTPW2900ENHTPW2900ENH 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High-speed switching (2) Small gate charge: Q = 8.2 nC (typ.) SW (3) Low drain-source on-resistance: R = 24 m (typ.) (V = 10 V) DS(ON) GS (4) Low leakage current: I = 10 A (max) (V = 200 V) DSS DS (5) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain DSOP Advance Start of commercial production 2015-08 2015-2019 2019-10-30 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TPW2900ENH 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 200 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1) I 33 A c D (Bottom drain) Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 36 D Drain current (pulsed) (t = 100 s) (Note 1) I 150 DP Power dissipation (T = 25 ) P 142 W c D (Bottom drain) Power dissipation (Note 3) P 2.5 D Power dissipation (Note 4) P 0.8 D Single-pulse avalanche energy (Note 5) E 176 mJ AS Single-pulse avalanche current (Note 5) I 33 A AS Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Bottom drain R 0.88 /W th(ch-c) (T = 25 ) c Channel-to-case thermal resistance Top source R 0.93 /W th(ch-c) (T = 25 ) c Channel-to-ambient thermal resistance (T = 25 ) (Note 3) R 50 /W a th(ch-a) Channel-to-ambient thermal resistance (T = 25 ) (Note 4) R 156 /W a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 60 V, T = 25 (initial), L = 250 H, I = 33 A DD ch AS Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2015-2019 2019-10-30 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0