BUK9M15-40H N-channel 40 V, 15.0 m logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully automotive qualified to AEC-Q101 at 175 C Trench 9 superjunction technology: Low power losses, high power density LFPAK copper clip package technology: High robustness and reliability Gull wing leads for high manufacturability and AOI Repetitive avalanche rated 3. Applications 12 V automotive systems Powertrain, chassis, body and infotainment applications Medium/Low power motor drive DC-DC systems LED lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 30 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 44 W tot mb Static characteristics R drain-source on-state V = 10 V I = 10 A T = 25 C 8.4 12.1 15 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 10 A V = 20 V V = 4.5 V - 1.2 2.5 nC GD D DS GS Fig. 13 Fig. 14 Source-drain diode Q recovered charge I = 10 A dI /dt = -100 A/s V = 0 V - 11 - nC r S S GS V = 20 V DSNexperia BUK9M15-40H N-channel 40 V, 15.0 m logic level MOSFET in LFPAK33 Symbol Parameter Conditions Min Typ Max Unit S softness factor I = 10 A dI /dt = -100 A/s V = 0 V - 0.57 - S S GS V = 20 V T = 25 C Fig. 17 DS j 1 30A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D Mounting base connected to drain 1 2 3 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9M15-40H LFPAK33 Plastic, single ended surface mounted package (LFPAK33) 8 SOT1210 leads 0.65 mm pitch 7. Marking Table 4. Marking codes Type number Marking code BUK9M15-40H 91540H 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V gate-source voltage DC T 175 C -10 16 V GS j P total power dissipation T = 25 C Fig. 1 - 44 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 30 A D GS mb V = 10 V T = 100 C Fig. 2 - 27.4 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 155 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode BUK9M15-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 29 January 2019 2 / 11