TP65H035WSQA 650V Cascode GaN FET in TO-247 (source tab) Description Features The TP65H035WSQA 650V, 35m gallium nitride (GaN) FET JEDEC-qualified GaN technology is a normally-off automotive (AEC-Q101) qualified device. It Junction temperature rating of 175C combines state-of-the-art high voltage GaN HEMT and low Dynamic R production tested DS(on) voltage silicon MOSFET technologiesoffering superior Robust design, defined by reliability and performance. Intrinsic lifetime tests Wide gate safety margin Transphorm GaN offers improved efficiency over silicon, Transient over-voltage capability through lower gate charge, lower crossover loss, and smaller Very low Q RR reverse recovery charge. Reduced crossover loss RoHS compliant and Halogen-free packaging Related Literature AN0009: Recommended External Circuitry for GaN FETs Benefits AN0003: Printed Circuit Board Layout and Probing Enables AC-DC bridgeless totem-pole PFC designs AN0010: Paralleling GaN FETs Increased power density Reduced system size and weight Overall lower system cost Ordering Information Achieves increased efficiency in both hard- and soft- Package switched circuits Part Number Package Configuration Easy to drive with commonly-used gate drivers TP65H035WSQA 3 lead TO-247 Source GSD pin layout improves high speed design Applications TP65H035WSQA Automotive TO-247 Datacom (top view) Broad industrial S PV inverter Key Specifications V (V) min 650 DS V (V) max 800 (TR)DSS R (m) max* 41 DS(on) G S D Q (nC) typ 178 RR Q (nC) typ 24 G * Dynamic RDS(on) see Figures 13 and 14 Common Topology Power Recommendations CCM bridgeless totem-pole* 3980W max Hard-switched inverter** 4690W max Conditions: F =45kHz T =115C T =90C insulator between SW J HEATSINK device and heatsink (6 mil Sil-Pad K-10) power de-rates at lower voltages with constant current Cascode Schematic Symbol Cascode Device Structure * VIN=230VAC VOUT=390VDC ** VIN=380VDC VOUT=240VAC February 1, 2018 2018 Transphorm Inc. Subject to change without notice. tp65h035wsqa.0 1 TP65H035WSQA Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a V(TR)DSS Transient drain to source voltage 800 V V Gate to source voltage 20 GSS P Maximum power dissipation T =25C 187 W D C b Continuous drain current T =25C 47.2 A C I D b Continuous drain current T =100C 33.4 A C IDM Pulsed drain current (pulse width: 10s) 240 A c (di/dt) Reverse diode di/dt, repetitive 1800 A/s RDMC d (di/dt) Reverse diode di/dt, transient 3800 A/s RDMT T Case -55 to +175 C C Operating temperature T Junction -55 to +175 C J T Storage temperature -55 to +175 C S e TSOLD Soldering peak temperature 260 C - Mounting Torque 80 N cm Notes: a. In off-state, spike duty cycle D<0.01, spike duration <1s b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Continuous switching operation d. 300 pulses per second for a total duration 20 minutes e. For 10 sec., 1.6mm from the case Thermal Resistance Symbol Parameter Maximum Unit RJC Junction-to-case 0.8 C/W R Junction-to-ambient 40 C/W JA February 1, 2018 transphormusa.com tp65h035wsqa.0 2