Product Information

TSD5N60M

TSD5N60M electronic component of Truesemi

Datasheet
MOSFET N Trench 600V 4.5A (Tc) 5V @ 250uA 2.5 Ω @ 2.25A,10V TO-252 RoHS
Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2465 ea
Line Total: USD 1.23

2425 - Global Stock
Ships to you between
Wed. 15 May to Mon. 20 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
2337 - WHS 1


Ships to you between
Wed. 15 May to Mon. 20 May

MOQ : 5
Multiples : 5

Stock Image

TSD5N60M
Truesemi

5 : USD 0.2699
50 : USD 0.2208
150 : USD 0.1998
500 : USD 0.1735
2500 : USD 0.1433
5000 : USD 0.1362

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

:The TSD5N60M is an N-channel MOSFET with a Trench Structure made by Truesemi. It is rated for 600V with a current rating of 4.5A (Tc). The gate threshold voltage is 5V with a maximum gate leakage current of 250uA. It has a drain to source Rds (on) of 2.5 Ohms and a maximum drain current of 2.25A. It is available in a TO-252 RoHS standard package and is designed for low noise, low power operating environments.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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