Product Information

TSF10N80M

TSF10N80M electronic component of Truesemi

Datasheet
MOSFET N Trench 800V 10A 5V @ 250uA 1.1 Ω @ 5A,10V TO-220F RoHS

Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9374 ea
Line Total: USD 0.9374

650 - Global Stock
Ships to you between
Fri. 12 Apr to Wed. 17 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
336 - Global Stock


Ships to you between
Fri. 12 Apr to Wed. 17 Apr

MOQ : 1
Multiples : 1

Stock Image

TSF10N80M
Truesemi

1 : USD 0.9671
10 : USD 0.8753
50 : USD 0.8265
100 : USD 0.7694
500 : USD 0.7448
1000 : USD 0.7326

     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The TSF10N80M is a MOSFET (metal-oxide-semiconductor field-effect transistor) with an N-channel trench 800V 10A 5V @ 250uA 1.1O @ 5A, 10V TO-220F RoHS manufactured by Truesemi. It is designed to control large amounts of power, allowing for accurate switching and high speed operation. Because it is a MOSFET, the TSF10N80M has low gate voltage and low input capacitance. It has a voltage rating of 800V, current rating of 10A, and drain to source voltage of 5V at 250uA and 1.1O at 5A, 10V. The package is a RoHS compliant TO-220F.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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