Product Information

TSF7N60M

TSF7N60M electronic component of Truesemi

Datasheet
MOSFET N Trench 600V 7A (Tc) 5V @ 250uA 1.3 Ω @ 3.5A,10V TO-220F RoHS

Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4247 ea
Line Total: USD 0.42

124 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
116 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 5
Multiples : 5

Stock Image

TSF7N60M
Truesemi

5 : USD 0.4631
50 : USD 0.3449
150 : USD 0.309
500 : USD 0.2643
2000 : USD 0.2444
5000 : USD 0.2323

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The TSF7N60M is an N-channel Trench Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Truesemi. It is a 600 V, 7 A device with a 5 V gate-source threshold voltage of 250 µA, a 1.3 O on-state resistance of 3.5 A at 10 V, and is packaged as a TO-220F RoHS compliant device. This device is suitable for use in power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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