D1008UK TT Electronics

TETRA FET ROHS COMPLIANT METAL GATE RF SILICON FET D1008UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W28V500MHZ PUSH-PULL FEATURES: SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW C rss SIMPLE BIAS CIRCUIT LOW NOISE HIGH GAIN 13dB MINIMUM APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1MHz to 500MHz ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) CASE P Power Dissipation 175W D BV Drain Source Breakdown Voltage 70V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current (Per Side) 10A D(SAT) T Storage Temperature Range -65 to +150C stg T Maximum Operating Junction Temperature 200C J Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 7281 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: TETRA FET D1008UK ROHS COMPLIANT METAL GATE RF SILICON FET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) CASE Symbols Parameters Test Conditions Min. Typ. Max. Units PPPPEEEERRRR SSSSIIIIDDDDEEEE Drain Source BV V = 0V I = 100mA 70 V DSS GS D Breakdown Voltage Zero Gate Voltage Drain I V = 28V V = 0V 2 mA DSS DS GS Current I V = 20V V = 0V Gate Leakage Current 1 A GSS GS DS V I = 10mA V = V Gate Threashold Voltage * 1 7 V GS(th) D DS GS g V = 10V I = 2A Forward Transconducatnce* 1.6 S fs DS D * Pulse Width 380us, 2% DYNAMIC CHARACTERISTICS Symbols Parameters Test Conditions Min. Typ. Max. Units PPPPeeeerrrr SSSSiiiiddddeeee V = 28V V = -5V DS GS C Input Capacitance 120 iss f = 1.0MHz V = 28V V = 0V DS GS C Output Capacitance 60 pF oss f = 1.0MHz V = 28V V = 0V Reverse Transfer DS GS C 5 rss Capacitance f = 1.0MHz TTTToooottttaaaallll DDDDeeeevvvviiiicccceeee Common Source Power 13 dB G P = 80W PS O Gain V = 28 DS Drain Efficiency 50 % I = 0.4A DQ f = 400MHz VSWR Load Mismatch Tolerance 20:1 HHHHAAAAZZZZAAAARRRRDDDDOOOOUUUUSSSS MMMMAAAATTTTEEEERRRRIIIIAAAALLLL WWWWAAAARRRRNNNNIIIINNNNGGGG The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. TTTTHHHHEEEESSSSEEEE DDDDEEEEVVVVIIIICCCCEEEESSSS MMMMUUUUSSSSTTTT NNNNEEEEVVVVEEEERRRR BBBBEEEE TTTTHHHHRRRROOOOWWWWNNNN AAAAWWWWAAAAYYYY WWWWIIIITTTTHHHH GGGGEEEENNNNEEEERRRRAAAALLLL IIIINNNNDDDDUUUUSSSSTTTTRRRRIIIIAAAALLLL OOOORRRR DDOOMMEESSTTIICC WWAASSTTEE DDOOMMEESSTTIICC WWAASSTTEE Thermal Properties Symbols Parameters Max. Units R Thermal Resistance, Junction To Case 1.0 C/W THj-case SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 7281 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: