Product Information

D2003UK

D2003UK electronic component of TT Electronics

Datasheet
RF MOSFET Transistors Silicon DMOS RF FET 5W-28V-1GHz PP
Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 50
Multiples : 25

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D2003UK
TT Electronics

50 : USD 95.114
N/A

Obsolete
0 - WHS 2

MOQ : 50
Multiples : 50

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D2003UK
TT Electronics

50 : USD 99.2371
5000 : USD 96.5112
N/A

Obsolete
0 - WHS 3

MOQ : 2
Multiples : 1

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D2003UK
TT Electronics

2 : USD 100.4871
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Mounting Style
Frequency
Channel Mode
Channel Type
Drain Efficiency Typ
Screening Level
Number Of Elements
Rad Hardened
Drain Source Voltage Max
Operating Temp Range
Pin Count
Application
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Additional Infomation About Product

TetraFET D2003UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED B MULTI-PURPOSE SILICON H C DMOS RF FET G 2 3 1 5W 28V 1GHz A D E 54 PUSHPULL F I FEATURES SIMPLIFIED AMPLIFIER DESIGN NMKO J SUITABLE FOR BROAD BAND APPLICATIONS DQ VERY LOW C PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 rss PIN 3 DRAIN 2 PIN 4 GATE 2 SIMPLE BIAS CIRCUITS PIN 5 GATE 1 LOW NOISE DIM mm Tol. Inches Tol. HIGH GAIN 13 dB MINIMUM A 16.38 0.26 0.645 0.010 B 1.52 0.13 0.060 0.005 C 45 5 45 5 D 6.35 0.13 0.250 0.005 E 3.30 0.13 0.130 0.005 APPLICATIONS F 14.22 0.13 0.560 0.005 G 1.27 x 45 0.13 0.05 x 45 0.005 VHF/UHF COMMUNICATIONS H 1.52 0.13 0.060 0.005 I 6.35 0.13 0.250 0.005 from 50 MHz to 1 GHz J 0.13 0.02 0.005 0.001 K 2.16 0.13 0.085 0.005 M 1.52 0.13 0.060 0.005 N 5.08 MAX 0.200 MAX O 18.90 0.13 0.744 0.005 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 35W D BV Drain Source Breakdown Voltage * 65V DSS BV Gate Source Breakdown Voltage * 20V GSS I Drain Current * 1A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 3416 E-mail: sales semelab.co.uk Website: D2003UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit PER SIDE DrainSource Breakdown BV V = 0 I = 10mA 65 V DSS GS D Voltage Zero Gate Voltage I V = 28V V = 0 1 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 A GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 17 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 1A 0.18 S fs DS D TOTAL DEVICE G Common Source Power Gain P = 5W 13 dB PS O Drain Efficiency V = 28V I = 0.2A 40 % DS DQ VSWR Load Mismatch Tolerance f = 1GHz 20:1 PER SIDE C Input Capacitance V = 28V V = 5V f = 1MHz 12 pF iss DS GS C Output Capacitance V = 28V V = 0 f = 1MHz 6 pF oss DS GS C Reverse Transfer Capacitance V = 28V V = 0 f = 1MHz 0.5 pF rss DS GS * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA R Thermal Resistance Junction Case Max. 5.0C / W THjcase Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 3416 E-mail: sales semelab.co.uk Website:

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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TT ElectronicsBI
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TT4
WEL
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Welwyn (TT electronics)
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Welwyn Components TT Electronics
Welwyn Components / TT Electronics

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