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BF1100WR,115

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Trans RF MOSFET N-CH 14V 0.03A 4-Pin(3+Tab) CMPAK T/R

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

89: USD 0.306 ea
Line Total: USD 27.23

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MOQ: 89 Multiples: 1
Pack Size: 1

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz 3g gate 2 2 Superior cross-modulation performance during AGC. 4g gate 1 1 APPLICATIONS d handbook, halfpage VHF and UHF applications such as television tuners and professional communications equipment. 34 DESCRIPTION g 2 Enhancement type field-effect transistor in a plastic g microminiature SOT343R package. The transistor 1 consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to 21 ensure good cross-modulation performance during AGC. s,b Top view MAM192 CAUTION Marking code: MF. The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline (SOT343R) and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 14 V DS I drain current 30 mA D P total power dissipation 280 mW tot T operating junction temperature 150 C j y forward transfer admittance 24 28 33 mS fs C input capacitance at gate 1 2.2 2.6 pF ig1-s C reverse transfer capacitance f = 1 MHz 25 35 fF rs F noise figure f = 800 MHz 2 dB 1995 Apr 25 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON 1 1
Id - Continuous Drain Current 0.03 A 0.03 A
Operating Frequency 1000 MHz 1000 MHz
Pd - Power Dissipation 280 (mW) 280 (mW)
Mounting Style Surface Mount Surface Mount
Packaging Tape And Reel Tape And Reel
Brand Nxp Semiconductors Nxp Semiconductors
Operating Temp Range - 65 C to 150 C - 65 C to 150 C
Package Type CMPAK CMPAK
Pin Count 3 + Tab 3 + Tab
Number Of Elements 2 2
Channel Type N N
Screening Level Military Military
Channel Mode Enhancement Enhancement
Rad Hardened No No
Output Capacitance Typ Vds 1.4@9v/1.1@12v pF 1.4@9v/1.1@12v pF
Reverse Capacitance Typ 0.025@9v/0.025@12v pF 0.025@9v/0.025@12v pF
Noise Figure Max 2.8(Db) 2.8(Db)
Drain Source Voltage Max 14 V 14 V