Prod uct Bul le tin OP954 June 1996 PIN Sili con Pho to di ode Type OP954 o Fea tures Ab so lute Maxi mum Rat ings (T = 25 C un less oth er wise noted) A Re verse Break down Volt age . 60 V Very wide receiving angle o o Stor age and Op er at ing Tem pera ture Range -40 C to +100 C Linear response vs. irradiance Lead Sol der ing Tem pera ture 1/16 inch (1.6 mm) from case for 5 sec. with sol der ing o (1) Fast switching time iron 260 C (2) Side-looking package ideal for space Power Dis si pa tion . 100 mW limited applications Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. De scrip tion o o (2) Derate linearly 1.67 mW/ C above 25 C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a The OP954 device consists of a PIN radiometric intensity level which varies less than 10% over the entire lens surface of the silicon photodiode molded in a clear photodiode being tested. (0.042 T -1.5) epoxy package which allows spectral (4) To calculate typical dark current in A, use the formula I = 10 A where T is D A o response from visible to infrared light ambient temperature in C. wavelengths. The very wide receiving angle provides relatively even reception Typi cal Per form ance Curves over a large area. The side-looking package is designed for easy PC board mounting. These devices are 100% Coupling Characteristics Relative Respnse vs. production tested using infrared light for Wavelenght OP954 and OP245 close correlation with Opteks GaAs and GaAlAs emitters. V = 5 V R IF = 20 mA Dis tance Be tween Lens Tips - inches - Wave length - nm Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 3-60Type OP954 o Elec tri cal Char ac ter is tics (T = 25 C un less oth er wise noted) A SYM BOL PA RA ME TER MIN TYP MAX UNITS TEST CON DI TIONS 2(3) I Reverse Light Current 3.5 8 A V = 5 V, E = 1 mW/cm L R e I Reverse Dark Current 1 60 nA V = 30 V, E = 0 D R e V Reverse Breakdown Voltage 60 V I = 100 A (BR) R V Forward Voltage 1.2 V I = 1 mA F F C Total Capacitance 4 pF V = 20 V, E = 0, f = 1.0 MHz T R e t , t Rise Time, Fall Time 5 ns V = 20 V, = 850 nm, R = 50 r f R L Typi cal Per form ance Curves Normalized Light Current vs Total Capacitance vs Normalized Light and Dark Reverse Voltage Reverse Voltage Current vs Ambient Temperature V = 5 V R = 935 nm o T = 25 C Normalized to A o 2 T = 25 C E = 0 mW/cm A e f = 1 MHz Light Current o TA = 25 C = 935 nm Normalized to V = 5 V R Dark Current o T - Ambient Temperature - C A V - Reverse Voltage - V V - Reverse Voltage - V R R Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular Displacement V = 5 V R o T = 25 C A = 935 nm Test Conditions: = 935 nm V = 5 V R Distance Lens to Lens = 1.5 inches 2 E - Irradiance - mW/cm e - Angular Displacement - Deg. Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396 3-61